supported by the National High-Technology Research and Development Program of China(Grant No.2015AA034801);the Foundation of the State Key Laboratory of Mechanical Transmission of Chongqing University(Grant Nos.SKLMT-ZZKT-2017M15,SKLM-ZZKT-2015Z16,and SKLMT-KFKT-201419);the National Natural Science Foundation of China(Grant Nos.11374359,11304405,and 11544010);the Natural Science Foundation of Chongqing(Grant Nos.cstc2015jcyj A50035 and cstc2015jcyj A1660);the Fundamental Research Funds for the Central Universities,China(Grant Nos.106112017CDJQJ328839,106112014CDJZR14300050,106112016CDJZR288805,and 106112015CDJXY300002);the Sharing Fund of Large-scale Equipment of Chongqing University(Grant Nos.201606150016,201606150017,and 201606150056)
In order to decrease the Schottky barrier height and sheet resistance between graphene (Gr) and the p-GaN layers in GaN-based light-emitting diodes (LEDs), some transparent thin films with good conductivity and la...
Project supported by the National Natural Science Foundation of China (Grant No. 60621061);the National Basic Research Program of China (Grant Nos. 2006CB921305 and 2009CB929103)
We investigate the thermoelectric-transport properties of metal/graphene/metal hetero-structure. We use a single band tight-binding model to prcsent the two-dimensional electronic band structure of graphene. Using the...