National Natural Science Foundation of China(22271281,91961115,22325109,22171263,and 62227815);Scientific Research and Equipment Development Pro-ject of Chinese Academy of Sciences(YJKYQ20210024);Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China(2021ZR101);Natural Science Foundation of Fujian Province(2022J06032 and 2021J02017);Selfdeployment Project Research Program of Haixi Institutes,Chinese Academy of Sciences(CXZX-2022-GH09)。
One-dimensional(1D)semiconductor nanostructures exhibit exceptional performance in mitigating short-channel effects and ensuring low power consumption.However,the scarcity of high-mobility ptype 1D materials impedes f...
We acknowledge the General Research Fund (No. CityU 11275916) and the Theme-based Research Scheme (No. T42-103/16-N) of the Research Grants Council of Hong Kong SAR, China, the National Natural Science Foundation of China (Nos. 51672229 and 61605024), the Science Technology and Innovation Committee of Shenzhen Municipality (No. JCYJ20160229165240684) and a grant from the Shenzhen Research Institute, City University of Hong Kong.