supported by the Science Fund of Educational Department of Henan Province of China (Grant No. 13A140021);the National Natural Science Foundation of China (Grant Nos. 50972054 and 61176124);the State Key Program for Basic Research of China (Grant No. 2010CB934201);the State Key Program for Science and Technology of China (Grant No. 2009ZX02039-004)
ZrO2 nanocrystallite-based charge trap flash memory capacitors incorporating a (ZrO2)0.6(SiO2)0.4 pseudobinary high-k oxide film as the charge trapping layer were prepared and investigated. The precipitation react...