SCATTEROMETRY

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Analysis of Line-Edge Roughness Using EUV Scatterometry
《Nanomanufacturing and Metrology》2022年第2期149-158,共10页Analía Fernández Herrero Frank Scholze Gaoliang Dai Victor Soltwisch 
funding from the Electronic Component Systems for European Leadership Joint Undertaking under grant agreement No 826589|MADEin4;This Joint Undertaking receives support from the European Union’s Horizon 2020 research and innovation programme and The Netherlands,France,Belgium,Germany,Czech Republic,Austria,Hungary,and Israel;Open Access funding enabled and organized by Projekt DEAL.
Smaller and more complex three-dimensional periodic nanostructures are part of the next generation of integrated electronic circuits.Additionally,decreasing the dimensions of nanostructures increases the effect of lin...
关键词：Line-edge roughness LER LWR EUV scatterometry Debye-Waller factor 
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