SCATTEROMETRY

作品数：5被引量：13H指数：2
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Analysis of Line-Edge Roughness Using EUV Scatterometry
《Nanomanufacturing and Metrology》2022年第2期149-158,共10页Analía Fernández Herrero Frank Scholze Gaoliang Dai Victor Soltwisch 
funding from the Electronic Component Systems for European Leadership Joint Undertaking under grant agreement No 826589|MADEin4;This Joint Undertaking receives support from the European Union’s Horizon 2020 research and innovation programme and The Netherlands,France,Belgium,Germany,Czech Republic,Austria,Hungary,and Israel;Open Access funding enabled and organized by Projekt DEAL.
Smaller and more complex three-dimensional periodic nanostructures are part of the next generation of integrated electronic circuits.Additionally,decreasing the dimensions of nanostructures increases the effect of lin...
关键词：Line-edge roughness LER LWR EUV scatterometry Debye-Waller factor 
Model-based characterisation of complex periodic nanostructures by white-light Mueller-matrix Fourier scatterometry被引量：1
《Light(Advanced Manufacturing)》2021年第3期31-44,共14页Maria Laura Gödecke Karsten Frenner Wolfgang Osten 
supported by the Deutsche Forschungsgemeinschaft(DFG,German Research Foundation)under grant number Os 111/50-1.
Optical scatterometry is one of the most important metrology techniques for process monitoring in high-volume semiconductor manufacturing.By comparing measured signatures to modelled ones,scatterometry indirectly retr...
关键词：SCATTER hence inverse 
Selection of DBO measurement wavelength for bottom mark asymmetry based on FDTD method被引量：1
《Journal of Semiconductors》2019年第12期101-106,共6页Buqing Xu Qiang Wu Lisong Dong Yayi Wei 
supported by the National Science and Technology Major Project of China (Grant No. 2016ZX02301001)
A physical model for simulating overlay metrology employing diffraction based overlay(DBO)principles is built.It can help to optimize the metrology wavelength selection in DBO.Simulation result of DBO metrology with a...
关键词：diffraction based overlay SCATTEROMETRY photolithography simulation metrology wavelength finite difference time domain 
At wavelength coherent scatterometry microscope using high-order harmonics for EUV mask inspection被引量：4
《International Journal of Extreme Manufacturing》2019年第3期1-12,共12页Yutaka Nagata Tetsuo Harada Takeo Watanabe Hiroo Kinoshita Katsumi Midorikawa 
In this review,we describe our research on the development of the 13.5 nm coherent microscope using high-order harmonics for the mask inspection of extreme ultraviolet(EUV)lithography.EUV lithography is a game-changin...
关键词：high-order harmonics coherent EUV light EUV lithography coherent EUV scatterometry microscope synchrotron radiation EUV mask inspection 
Solving the inverse grating problem by white light interference Fourier scatterometry被引量：8
《Light(Science & Applications)》2012年第1期17-23,共7页Valeriano Ferreras Paz Sandy Peterhansel Karsten Frenner Wolfgang Osten 
We are thankful for the technical support given by Thomas Schoder.This work was supported by the German DFG-funded priority program(SPP1327)on‘Optically generated sub-100 nm structures for technical and bio-medical applications’within the subproject‘Development of a functional sub-100 nm 3D two-photon polymerization technique and optical characterization methods’and the DFG project‘Inverse-source and inverse-diffraction problems in photonics(OS111/32-1).’。
Scatterometry is a well-established,fast and precise optical metrology method used for the characterization of sub-lambda periodic features.The Fourier scatterometry method,by analyzing the Fourier plane,makes it poss...
关键词：Fourier scatterometry inverse problem optical sub-lambda metrology RCWA white light interference 
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