SI-H

作品数:128被引量:242H指数:9
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Quasi-homoepitaxial GaN-based blue light emitting diode on thick GaN template被引量:1
《Chinese Physics B》2014年第1期301-306,共6页李俊泽 陶岳彬 陈志忠 姜显哲 付星星 姜爽 焦倩倩 于彤军 张国义 
Project supported by the National Basic Research Foundation of China (Grant Nos. TG2011CB301905 and TG2012CB619304) and the National Natural Science Foundation of China (Grant Nos. 60876063 and 61076012).
The high power GaN-based blue light emitting diode(LED) on an 80-μm-thick GaN template is proposed and even realized by several technical methods like metal organic chemical vapor deposition(MOCVD), hydride vapor-pha...
关键词:HOMOEPITAXY strain relaxation metal organic chemical vapor deposition(MOCVD) hydride vapor-phase epitaxy(HVPE) 
Electronic band transformation from indirect gap to direct gap in Si-H compound
《Chinese Physics B》2010年第7期491-496,共6页丁建宁 王君雄 袁宁一 坎标 陈效双 
supported by the National Natural Science Foundation of China (Grant No. 50775101);the New Century Excellent Talents (Grant No. NCET-04-0515);the Jiangsu Provincial Science and Technology Supporting Project,China (Grant No. BE2008030);Qing Lan Project (2008-04);Jiangsu University Natural Science Foundation of China (Grant No. 07KJB430023)
The electronic band structures of periodic models for S^H compounds are investigated by the density functional theory. Our results show that the Si H compound changes from indirect-gap semiconductor to direct-gap semi...
关键词:Si-H compounds band structure density functional theory tight-binding calculation 
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