Project supported by the Hunan Provincial Natural Science Foundation of China(Grant No.2018JJ3592).
The physical process of a single-stage planar-pulsed-inductive accelerator is investigated.Measurements include the waveforms of circuit current,capacitor voltage,plasma radiation intensity,and temporal plasma structu...
Project supported by the National Natural Science Foundation of China(Grant No.51675423)
It is widely accepted that the variation of ambient temperature has great influence on the battery model parameters and state-of-charge(SOC) estimation, and the accurate SOC estimation is a significant issue for devel...
supported by the National Basic Research Program of China(Grant No.2015CB759600);the National Natural Science Foundation of China(Grant Nos.61474113 and 61574140);the Beijing NOVA Program,China(Grant No.Z1611000049161132016071);China Academy of Engineering Physics(CAEP)Microsystem and THz Science and Technology Foundation,China(Grant No.CAEPMT201502);the Beijing Municipal Science and Technology Commission Project,China(Grant Nos.Z161100002116018 and D16110300430000);the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2012098)
The interface properties and electrical characteristics of the n-type 4H-SiC planar and trench metal-oxide-semiconductor (MOS) capacitors are investigated by measuring the capacitance voltage and current voltage. Th...
the Higher Education Commission (HEC);the support from Osterreichische Forschungsfodergesellschaft (FFG) (Project 834325)
The surface, structural, and mechanical properties of zirconium after irradiation with Ti: sapphire laser(800 nm, 30 fs,1 k Hz) have been investigated. The zirconium targets were exposed for a varying number of las...
Under certain conditions, ultrafast pulsed laser interaction with matter leads to the formation of self-organized conical as well as periodic surface structures (commonly reffered to as, laser induced periodic surfac...
supported by the National Natural Science Foundation of China(Grant No.61204006);the Fundamental Research Funds for the Central Universities,China(Grant No.K50511250002);the National Key Science and Technology Special Project,China(Grant No.2008ZX01002-002)
In this paper, the effect of alumina thickness on Al2O3/InP interface with post deposition annealing (PDA) in the oxygen ambient is studied. Atomic layer deposited (ALD) Al2O3 films with four different thickness v...