supported by National Key R&D Program of China (Grant No.2018YFB2202801);National Natural Science Foundation of China (Grant Nos.61927901,61822401,61851401);Beijing Nova Program of Science and Technology (Grant No.Z191100001119101);111 Project (Grant No.B18001)。
Silicon-based tunneling field effect transistor(TFET)with a band-to-band tunneling mechanism has been widely studied due to its ultra-steep subthreshold swing(SS),ultralow leakage current(Ioff),and good complementary ...