KA-BAND

作品数：36被引量：44H指数：4
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相关机构：电子科技大学北京理工大学西安电子科技大学中国科学院更多>>
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Low phase noise GaAs HBT VCO in Ka-band
《Journal of Semiconductors》2015年第2期120-123,共4页严婷 张玉明 吕红亮 张义门 武岳 刘一峰 
Project supported by the National Key Basic Research Program of China(No.2010CB327505);the Advanced Research Project(No.51308xxxx06);the Advanced Research Foundation(No.9140A08xxxx11DZ111)
Design and fabrication of a Ka-band voltage-controlled oscillator（VCO） using commercially available 1-μm GaAs heterojunction bipolar transistor technology is presented.A fully differential common-emitter configurat...
关键词：VCO GaAs HBT common-emitter phase noise π-feedback 
A Ka-band wide locking range frequency divider with high injection sensitivity被引量：1
《Journal of Semiconductors》2014年第3期109-115,共7页刘法恩 王志功 李智群 李芹 唐路 杨格亮 李竹 
Project supported by the National Basic Research Program(No.2010CB327404);the National High Technology Researchand Development Program of China(No.2011AA10305);the International Cooperation Projects in Science and Technology(No.2011DFA11310);the National Natural Science Foundation of China(Nos.60901012,61106024)
This paper proposes a direct injection-locked frequency divider（ILFD） with a wide locking range in the Ka-band. A complementary cross-coupled architecture is used to enhance the overdriving voltage of the switch tra...
关键词：IC design CMOS Ka-band direct injection-locked frequency divider ILFD 
Ka-band ultra low voltage miniature sub-harmonic resistive mixer with a new broadside coupled Marchand balun in 0.18-μm CMOS technology被引量：1
《Journal of Zhejiang University-Science C(Computers and Electronics)》2013年第4期288-295,共8页Ge-liang YANG Zhi-gong WANG Zhi-qun LI Qin LI Fa-en LIU Zhu LI 
Project supported by the National Basic Research Program (973) of China (No. 2010CB327404);the National High-Tech R&D Program (863) of China (No. 2011AA10305);the National Natural Science Foundation of China (No. 60901012)
A Ka-band sub-harmonically pumped resistive mixer （SHPRM） was designed and fabricated using the standard 0.18-μm complementary metal-oxide-semiconductor （CMOS） technology. An area-effective asymmetric broadside c...
关键词：Complementary metal-oxide-semiconductor （CMOS） Sub-harmonically pumped resistive mixer （SHPRM） Mar-chand balance-to-unbalance （balun） Millimeter wave （MMW） Monolithic microwave integrated circuit （MMIC） 
Three-dimensional simulation of a Ka-band relativistic Cherenkov source with metal photonic-band-gap structures被引量：9
《Chinese Physics B》2009年第6期2452-2458,共7页高喜 杨梓强 亓丽梅 兰峰 史宗君 李大治 梁正 
Project supported by the National Key Basic Research Program of China (Grant No 2007CB31040);the National Natural Science Foundation of China (Grant No 60571020)
This paper presents a three-dimensional particle-in-cell （PIC） simulation of a Ka-band relativistic Cherenkov source with a slow wave structure （SWS） consisting of metal photonic band gap （PBG） structures. In th...
关键词：Cherenkov source slow wave structure photonic band gap three-dimensional particlein-cell 
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