云南高校图书馆联盟文献共享服务平台- MOTT

MOTT: 作品数：80被引量：131H指数：7; 导出分析报告; 相关作者：李晓刚钟庆东靳常青李瑛王福会更多>>; 相关机构：中国科学院中国科学技术大学上海大学北京科技大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家科技基础条件平台建设计划北京市自然科学基金教育部“新世纪优秀人才支持计划”更多>>

Observation of quantum oscillations near the Mott-Ioffe-Regel limit in CaAs_(3)被引量：1: 《National Science Review》2024年第12期116-127,共12页Yuxiang Wang Minhao Zhao Jinglei Zhang Wenbin Wu Shichao Li Yong Zhang Wenxiang Jiang Nesta Benno Joseph Liangcai Xu Yicheng Mou Yunkun Yang Pengliang Leng Yong Zhang Li Pi Alexey Suslov Mykhaylo Ozerov Jan Wyzula Milan Orlita Fengfeng Zhu Yi Zhang Xufeng Kou Zengwei Zhu Awadhesh Narayan Dong Qian Jinsheng Wen Xiang Yuan Faxian Xiu Cheng Zhang; C.Z.was sponsored by the National Key Research and Development Program of China(2022YFA1405700);the National Natural Science Foundation of China(12174069 and 92365104);the Shuguang Program from the Shanghai Education Development Foundation;F.X.was supported by the National Natural Science Foundation of China(52225207,52350001,and 11934005);the Shanghai Pilot Program for Basic Research-Fudan University 21TQ1400100(21TQ006);the Shanghai Municipal Science and Technology Major Project(2019SHZDZX01);X.Y.was sponsored by the National Key R&D Program of China(2023YFA1407500);the National Natural Science Foundation of China(12174104 and 62005079);A portion of this work was performed at the National High Magnetic Field Laboratory(USA),which is supported by National Science Foundation Cooperative Agreement No.DMR-1644779 and the State of Florida;J.Z.was supported by the National Key R&D Program of China(2022YFA1602603);the Natural Science Foundation of China(12122411);supported by the National Key Research and Development Program of China(2021YFA1400400);the National Natural Science Foundation of China(12074174);N.B.J.was supported by the Prime Minister’s Research Fellowship.A.N.acknowledges support from a start-up grant at the Indian Institute of Science(SG/MHRD-19-0001);Department of Science&Technology-Science and Engineering Research Board(SRG/2020/000153).; The Mott-Ioffe-Regel limit sets the lower bound of the carrier mean free path for coherent quasiparticle transport.Metallicity beyond this limit is of great interest because it is often closely related to quantum crit...; 关键词：Mott-Ioffe-Regel limit quantum oscillations van Hove singularity mobility edge

Strong electron correlation-induced Mott-insulating electrides of Ae_(5)X_(3)(Ae=Ca,Sr,and Ba;X=As and Sb): 《Matter and Radiation at Extremes》2024年第3期74-82,共9页Ya Xu Lu Zheng Yunkun Zhang Zhuangfei Zhang QianQian Wang Yuewen Zhang Liangchao Chen Chao Fang Biao Wan Huiyang Gou; This work was supported by the National Natural Science Foundation of China(Grant Nos.12204419 and 12074013)。; The presence of interstitial electrons in electrides endows them with interesting attributes,such as low work function,high carrier concentration,and unique magnetic properties.Thorough knowledge and understanding of ...; 关键词：INTERMETALLIC FILLED occupied

Electronic structures and Mott state of epitaxial TaS_(2) monolayers: 《Science China(Physics,Mechanics & Astronomy)》2024年第5期91-97,共7页Qichao Tian Chi Ding Xiaodong Qiu Qinghao Meng Kaili Wang Fan Yu Yuyang Mu Can Wang Jian Sun Yi Zhang; supported by the National Natural Science Foundation of China(Grant No.92165205);the Innovation Program for Quantum Science and Technology of China(Grant No.2021ZD0302803);the National Key Research and Development Program of China(Grant No.2018YFA0306800);the Program of High-Level Entrepreneurial and Innovative Talents Introduction of Jiangsu Province,China。; Layered material TaS2hosts multiple structural phases and exotic correlated quantum states,including charge density wave(CDW),superconductivity,quantum spin liquid,and Mott insulating state.Here,we synthesized TaS_(2)...; 关键词：temperature MONOLAYER STATE

Mott Gap Filling by Doping Electrons through Depositing One Sub-Monolayer Thin Film of Rb on Ca_(2)CuO_(2)Cl_(2): 《Chinese Physics Letters》2024年第5期90-96,共7页李寒王朝晖范圣泰李华州杨欢闻海虎; supported by the National Natural Science Foundation of China (Grant Nos. 11974171, 12061131001, and 11927809);the National Key R&D Program of China (Grant No. 2022YFA1403201)。; Understanding the doping evolution from a Mott insulator to a superconductor probably holds the key to resolve the mystery of unconventional superconductivity in copper oxides. To elucidate the evolution of the electr...; 关键词：DOPING holds Electron

Investigation and mitigation of Mott neuronal oscillation fluctuation in spiking neural network: 《Science China(Information Sciences)》2024年第2期287-297,共11页Lindong WU Zongwei WANG Lin BAO Linbo SHAN Zhizhen YU Yunfan YANG Shuangjie ZHANG Guandong BAI Cuimei WANG John ROBERTSON Yuan WANG Yimao CAI Ru HUANG; This work was supported by National Key R&D Program of China(Grant No.2019YFB2205401);National Natural Science Foundation of China(Grant Nos.61834001,62025401,61927901);Beijing Nova Program(Grant No.20220484113);111 project(Grant No.B10081).; Mott devices,featuring low hardware cost and high energy efficiency,have been demonstrated as a key oscillatory element in artificial neurons to enable spiking neural networks(SNNs)such as conversionbased SNNs(CSNNs)....; 关键词：Mott neuron oscillation fluctuation variation-aware Mott neuronal model conversion-based spiking neural network activation function boundary

Quantitative determination of the critical points of Mott metal–insulator transition in strongly correlated systems: 《Chinese Physics B》2024年第1期647-652,共6页牛月坤倪煜王建利陈雷鸣邢晔宋筠冯世平; Project supported by the Scientific Research Foundation for Youth Academic Talent of Inner Mongolia University (Grant No.1000023112101/010);the Fundamental Research Funds for the Central Universities of China (Grant No.JN200208);supported by the National Natural Science Foundation of China (Grant No.11474023);supported by the National Key Research and Development Program of China (Grant No.2021YFA1401803);the National Natural Science Foundation of China (Grant Nos.11974051 and 11734002)。; Mottness is at the heart of the essential physics in a strongly correlated system as many novel quantum phenomena occur in the metallic phase near the Mott metal–insulator transition. We investigate the Mott transiti...; 关键词：critical point metal–insulator transition local quantum state fidelity strongly correlated system quasiparticle coherent weight

电极材料对NbO_(x)Mott忆阻器稳定性的影响: 《西安交通大学学报》2023年第12期129-135,共7页赵淑景任文君方胜利刘卫华李昕王小力杨世强韩传余; 国家自然科学基金资助项目(62174130);陕西省重点研发计划资助项目(2022GY-337,2021GY-175)。; 为了改善NbO_(x)Mott忆阻器电学稳定性和一致性,提升NbO_(x)Mott忆阻器构建人工脉冲神经元的应用潜力,研究制备了通孔型NbO_(x)Mott忆阻器,并对比研究了Pt、W电极材料对器件稳定性和一致性的影响。研究结果表明,相较于常见报道的Pt电极...; 关键词：Mott忆阻器 NbO_(x) 阈值阻变稳定性人工神经元电极材料

Reconfigurable Mott electronics for homogeneous neuromorphic platform: 《Chinese Physics B》2023年第12期67-72,共6页杨振路英明杨玉超; Project supported by the National Natural Science Foundation of China (Grant Nos.61925401,92064004,61927901,and 92164302);the 111 Project (Grant No.B18001);support from the Fok Ying-Tong Education Foundation;the Tencent Foundation through the XPLORER PRIZE。; To simplify the fabrication process and increase the versatility of neuromorphic systems,the reconfiguration concept has attracted much attention.Here,we developed a novel electrochemical VO_(2)(EC-VO_(2))device,which...; 关键词：Mott electronics RECONFIGURABLE neuromorphic computing VO_(2)

High-throughput screening of phase-engineered atomically thin transition-metal dichalcogenides for van der Waals contacts at the Schottky–Mott limit被引量：3: 《InfoMat》2023年第7期93-105,共13页Yanyan Li Liqin Su Yanan Lu Qingyuan Luo Pei Liang Haibo Shu Xiaoshuang Chen; National Natural Science Foundation of China,Grant/Award Number:62174151;Natural Science Foundation of Zhejiang Province,Grant/Award Numbers:LZ22F040003,Q21A050007。; A main challenge for the development of two-dimensional devices based on atomically thin transition-metal dichalcogenides(TMDs)is the realization of metal–semiconductor junctions(MSJs)with low contact resistance and ...; 关键词：density functional theory Fermi-level pinning metal-semiconductor junctions transition-metal dichalcogenides van der Waals contact

Observation of Mott instability at the valence transition of f-electron system: 《National Science Review》2023年第6期183-190,共8页Haifeng Yang Jingjing Gao Yingying Cao Yuanji Xu Aiji Liang Xiang Xu Yujie Chen Shuai Liu Kui Huang Lixuan Xu Chengwei Wang Shengtao Cui Meixiao Wang Lexian Yang Xuan Luo Yuping Sun Yi-feng Yang Zhongkai Liu Yulin Chen; supported by the Shanghai Municipal Science and Technology Major Project(2018SHZDZX02 to Y.L.C.and Z.K.L.);the National Natural Science Foundation of China(11634009 and 11674229 to Y.L.C.and Z.K.L.,11974397 to Y.-F.Y,11674326 and 11874357 to X.L.and Y.P.S.,and 12004248 to H.F.Y.);the National Key R&D Program of China(2017YFA0305400 to Z.K.L.,2022YFA1402203 to Y.-F.Y,and 2016YFA0300404 to X.L.and Y.P.S.);the Joint Funds of the National Natural Science Foundation of China and the Chinese Academy of Sciences Large-Scale Scientific Facility(U1832141 and U1932217 to X.L.and Y.P.S.);the Key Research Program of Frontier Sciences(QYZDB-SSW-SLH015 to X.L.and Y.P.S.);the Excellence and Scientific Research Grant of Hefei Science Center of Chinese Academy of Sciences(2018HSC-UE011 to X.L.and Y.P.S.);the Shanghai Sailing Program(20YF1430500 to H.F.Y.);the China Postdoctoral Science Foundation(2017M611635 to H.F.Y); Mott physics plays a critical role in materials with strong ele ctronic correlations.Mott insulator-to-metal transition can be driven by chemical doping,external pressure,temperature and gate voltage,which is often se...; 关键词：valence transition orbital-selective Mott transition Kondo coupling heavy fermions strong correlations ARPES DMFT

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