supported by the National Science and Technology Support Program of China(No.2012BAI13B07);the National High-Tech Research and Development Program of China(No.2013AA014101)
This paper presents a 1.12 Gb/s 11.3 mW transmitter using 0.18μm mixed signal complementary metal- oxide semiconductor technology with a 1.8 V supply voltage. This transmitter implements a high-speed transmission wit...
This paper presents a channel-select filter that employs an active-RC bi-quad structure for TV-tuner application. A design method to optimize the IIP3 of the bi-quad is developed. Multi-band selection and gain adjustm...
Project supported by the National High Technology Research and Development of China(No2009AA01Z261);the State Key Laboratory of Wireless Telecommunication,Southeast University,China
This paper presents a novel,fully integrated transmitter for 3-5 GHz pulsed UWB.The BPSK modulation transmitter has been implemented in SMIC CMOS 0.13μm technology with a 1.2-V supply voitage and a die size of 0.8×0...
Based on the I-V characteristics and the function of adjustable threshold voltage of a single electron transistor (SET), we design the basic ternary logic circuits, which have been simulated by SPICE and their power...
A CMOS charge-pump circuit with adjustable current is presented.A bandgap voltage reference,a low drop-out regulator,and a capacitive DC-DC voltage-booster are used to generate supply voltage for the current reference...