PHOTOTRANSISTORS

作品数:30被引量:61H指数:5
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相关领域:电子电信一般工业技术更多>>
相关作者:华树明更多>>
相关机构:北京半导体照明科技促进中心常州市产品质量监督检验所杭州远方光电信息股份有限公司飞利浦灯具(上海)有限公司更多>>
相关期刊:《Nano-Micro Letters》《Science China Chemistry》《Science Bulletin》《Frontiers of physics》更多>>
相关基金:国家自然科学基金国家重点基础研究发展计划高等学校学科创新引智计划福建省自然科学基金更多>>
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Interface engineering of ferroelectric-gated MoS_(2) phototransistor
《Science China(Information Sciences)》2021年第4期162-169,共8页Shuaiqin WU Xudong WANG Wei JIANG Luqi TU Yan CHEN Jingjing LIU Tie LIN Hong SHEN Jun GE Weida HU Xiangjian MENG Jianlu WANG Junhao CHU 
supported by National Natural Science Foundation of China(Grant Nos.61835012,61905267,61974153,62025405);Projects of International Cooperation and Exchanges NSFC(Grant No.62011530043);Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB44020100);Key Research Program of Frontier Sciences,CAS(Grant No.ZDBS-LY-JSC045);Shanghai Sailing Program(Grant No.19YF1454900)。
Two-dimensional(2D)layered materials have received significant attention owing to their unique crystal structures as well as outstanding optical and electric properties in photoelectric detection.However,most 2D mater...
关键词:2D materials ferroelectrics MoS_(2)phototransistors H-BN interface engineering 
A study on ionic gated MoS2 phototransistors被引量:2
《Science China(Information Sciences)》2019年第12期123-130,共8页Binmin WU Xudong WANG Hongwei TANG Tie LIN Hong SHEN Weida HU Xiangjian MENG Wenzhong BAO Jianlu WANG Junhao CHU 
partially supported by Major State Basic Research Development Program(Grant Nos.2016YFB0400801);National Natural Science Foundation of China(Grant Nos.61722408,61835012,51802041);Key Research Project of Frontier Sciences of Chinese Academy of Sciences(Grant Nos.QYZDY-SSW-JSC042,QYZDB-SSWJSC016);National Postdoctoral Program for Innovative Talents(Grant No.BX20180329);Shanghai Sailing Program(Grant No.19YF1454900)
Molybdenum disulfide(MoS2) holds great promise in the future applications of nanoelectronics and optoelectronic devices. Exploring those interesting physical properties of MoS2 using a strong electric field provided b...
关键词:MOS2 PHOTOTRANSISTOR electrolyte-gel GATING SCHOTTKY barrier electric double layer two-dimensional materials 
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