PHOTODIODE

作品数:104被引量:102H指数:5
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相关领域:电子电信更多>>
相关作者:陈杰金湘亮仇玉林张欣张帅更多>>
相关机构:中国科学院北京邮电大学中国科学院微电子研究所天津大学更多>>
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相关基金:国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划中国博士后科学基金更多>>
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64 × 64 GM-APD array-based readout integrated circuit for 3D imaging applications被引量:2
《Science China(Information Sciences)》2019年第6期130-140,共11页Jin WU Zhiming QIAN Yang ZHAO Xiangrong YU Lixia ZHENG Weifeng SUN 
supported by Natural Key R&D Program of China (Grant No. 2016YFB0400904);National Natural Science Foundation of China (Grant No. 61805036);Natural Science Foundation of Jiangsu Province (Grant No. BK20181139);Fundamental Research for Funds for Central Universities;the supporting in system testing and applications from the 44th Research Institute of China Electronics Technology Group Corporation
Using the high sensitivity of the avalanche photodiode(APD) detector operated in the Geigermode(GM), an array readout integrated circuit(ROIC) comprising a two-segment time-to-digital converter(TDC) is employed for wi...
关键词:single PHOTON detection AVALANCHE PHOTODIODE READOUT integrated circuit time-to-digital CONVERTER RANGING imaging application 
Comparison of the dark signal degradation induced by Gamma ray, proton, and neutron radiation in pinned photodiode CMOS image sensors被引量:5
《Science China(Information Sciences)》2019年第6期174-176,共3页Zujun WANG Yuanyuan XUE Wei CHEN Rui XU Hao NING Baoping HE Zhibin YAO Minbo LIU Jiangkun SHENG Wuying MA Guantao DONG 
supported by National Natural Science Foundation of China (Grant Nos. 11875223, 11805155, 11690043);the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDA15015000);the Innovation Foundation of Radiation Application (Grant No. KFZC2018040201);the Foundation of State Key Laboratory of China (Grant No. SKLIPR1803, 1610)
Dear editor,CMOS image sensors (CISs) present numerous advantages and have become feasible alternatives for CCDs (charge coupled devices) in satellite imaging system, nuclear industry, and particle detection (1–3)How...
关键词:PROTON Figure Comparison of the DARK SIGNAL DEGRADATION INDUCED by Gamma ray and neutron radiation in pinned PHOTODIODE CMOS image sensors 
A 256×256 time-of-flight image sensor based on center-tap demodulation pixel structure被引量:5
《Science China(Information Sciences)》2016年第4期128-137,共10页Zhe CHEN Shan DI Zhongxiang CAO Qi QIN Fei JI Liyuan LIU Nanjian WU 
supported by National Natural Science Foundation of China (Grant Nos. 61234003, 61434004, 61504141);Funds for Major State Basic Research of China (Grant No. 2011CB932902)
This paper proposes a 256×256 time-of-flight(TOF) image sensor based on the center-tap(CT)demodulation pixel structure. The image sensor can capture both the two-dimensional(2D) high speed image and the three-d...
关键词:CMOS image sensor demodulation pixel depth image pinned photodiode time-of-flight(TOF) 
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