supported by the National Natural Sci-ence Foundation of China under grant No. 50472068 and No. 50721002;the National "863" High Technology Re-search and Development Program of China under grant No. 2006AA03A145 and No. 2007AA03Z405;the Na-tional Basic Research Program of China under grant No.2009CB930503;the Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China under grant No. 707039
Two-inch semi-insulating SiC bulk crystals with resistivity higher than 1 × 10^6 Qcm were achieved by vanadium doping during sublimation. Secondary-ion-mass-spectrometry (SIMS) was employed to determine the concent...