HOT-CARRIER

作品数：18被引量：14H指数：3
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相关作者：刘斯扬钱钦松孙伟锋王金延张兴更多>>
相关机构：北京大学东南大学西安电子科技大学更多>>
相关期刊：《InfoMat》《Chinese Physics B》《npj Computational Materials》《Journal of Electronics(China)》更多>>
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Anomalous Channel Length Dependence of Hot-Carrier-Induced Saturation Drain Current Degradation in n-Type MOSFETs
《Chinese Physics Letters》2015年第8期193-195,共3页张春伟 刘斯扬 孙伟锋 周雷雷 张艺 苏巍 张爱军 刘玉伟 胡久利 何骁伟 
Supported by Hong Kong,Macao and Taiwan Science&Technology Cooperation Program of China under Grant No2014DFH10190;the Distinguished Young Scientists Foundation of Jiangsu Province under Grant No BK20130021;the National Natural Science Foundation of China under Grant Nos 61204083 and 61306092;the Qing Lan Project
The dependencies of hot-carrier-induced degradations on the effective channel length Lch,eff are investigated for n-type metal-oxide-semiconductor field effect transistor （MOSFETs）. Our experiments find that, with d...
关键词：Anomalous Channel Length Dependence of Hot-Carrier-Induced Saturation Drain Current Degradation in n-Type MOSFETs 
Hot-Carrier Stress Effects on GIDL and SILC in 90nm LDD-MOSFET with Ultra-Thin Gate Oxide被引量：3
《Chinese Physics Letters》2009年第1期292-295,共4页胡仕刚 郝跃 马晓华 曹艳荣 陈炽 吴笑峰 
Supported by the National Natural Science Foundation of China under Grant Nos 60736033 and 60506020.
Hot-carrier degradation for 90 nm gate length lightly-doped drain （LDD） NMOSFET with ultra-thin （1.4 nm） gate oxide is investigated under the low gate voltage stress （LGVS） and peak substrate current （Isub max...
关键词：field emission molybdenum dioxide enhancement factor 
HOT-CARRIER ENERGY-TRANSFER RATE IN GaAs-AlGaAs HETEROSTRUCTURES
《Chinese Physics Letters》1987年第5期193-196,共4页LEI Xiaolin 
Hot-carrier energy-transfer rates in GaAs-AlGaAs single and multiple hetero structures are studied based on a balanceequation approach recently developed,The election temperature is almost a universal function of the ...
关键词：RATE PHONON EQUATION 
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