云南高校图书馆联盟文献共享服务平台- HOT-CARRIER

HOT-CARRIER: 作品数：18被引量：14H指数：3; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：刘斯扬钱钦松孙伟锋王金延张兴更多>>; 相关机构：北京大学东南大学西安电子科技大学更多>>; 相关期刊：《InfoMat》《Chinese Physics B》《npj Computational Materials》《Journal of Electronics(China)》更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划更多>>

Hot-carrier engineering for two-dimensional integrated infrared optoelectronics: 《InfoMat》2024年第9期50-74,共25页Yuanfang Yu Jialin Zhang Lianhui Wang Zhenhua Ni Junpeng Lu Li Gao; National Key Research and Development Program of China,Grant/Award Numbers:2021YFA1202904,2023YFB3611400;Project of State Key Laboratory of Organic Electronics and Information Displays,Nanjing University of Posts and Telecommunications,Grant/Award Number:GZR2024010024;Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications,Grant/Award Number:NY223181;National Natural Science Foundation of China,Grant/Award Numbers:62375139,62288102,62235008,62174026,62225404;Natural Science Foundation of Jiangsu Province Major Project,Grant/Award Number:BK20212012;Project of State Key Laboratory of Organic Electronics and Information Displays,Grant/Award Number:GDX2022010007。; Plasmonic hot carrier engineering holds great promise for advanced infrared optoelectronic devices.The process of hot carrier transfer has the potential to surpass the spectral limitations of semiconductors,enabling d...; 关键词：hot carriers infrared optoelectronic devices surface plasmon resonance two-dimensional materials

High performance of hot-carrier generation,transport and injection in TiN/TiO_(2)junction: 《Frontiers of physics》2022年第5期35-45,共11页Tingting Liu Qianjun Wang Cheng Zhang Xiaofeng Li Jun Hu; We really appreciate the financial support from the National Natural Science Foundation of China(Grant Nos.61875143,61905170,62075146,and 11574223);the Natural Science Foundation of Jiangsu Province(Nos.BK20180042,BK20181169,and BK20190816);the Natural Science Foundation of the Jiangsu Higher Education Institutions of China(No.17KJA480004);the Priority Academic Program Development(PAPD)of Jiangsu Higher Education Institution,and the start-up funding of Ningbo University,and the Yongjiang Recruitment Project(No.432200942)。; Improving the performance of generation,transport and injection of hot carriers within metal/semiconductor junctions is critical for promoting the hot-carrier applications.However,the conversion efficiency of hot carr...; 关键词：metal/semiconductor junction plasmonic material hotcarrier generation lifetime and mean free path injection efficiency

Self-trapped exciton engineering for white-light emission in colloidal lead-free double perovskite nanocrystals被引量：5: 《Science Bulletin》2020年第13期1078-1084,M0003,共8页Muyu Cong Bin Yang Feng Hong Tiancheng Zheng Youbao Sang Jingwei Guo Songqiu Yang Keli Han; supported by the National Natural Science Foundation of China(21533010,21525315);the National Key Research and Development Program of China(2017YFA0204800);DICP DMTO201601,DICP ZZBS201703,and the Science Challenging Program(JCKY2016212A501).; Intrinsic broadband photoluminescence(PL)of self-trapped excitons(STEs)are systematically studied in lead-free double perovskite nanocrystals(NCs).It is clarified that bandgap(direct/indirect)has important influence o...; 关键词：Double perovskite Nanocrystal Trap state Hot-carrier cooling Carrier-phonon coupling

Simple experimental procedures to distinguish photothermal from hot-carrier processes in plasmonics被引量：5: 《Light(Science & Applications)》2020年第1期974-989,共16页Guillaume Baffou Ivan Bordacchini Andrea Baldi Romain Quidant; support by the Dutch Research Council(Nederlandse Organisatie voor Wetenschappelijk Onderzoek)via the NWO Vidi award 680-47-550.; Light absorption and scattering of plasmonic metal nanoparticles can lead to non-equilibrium charge carriers,intense electromagnetic near-fields,and heat generation,with promising applications in a vast range of field...; 关键词：collective PHOTOCHEMICAL INTENSE

Computational design of bimetallic core-shell nanoparticles for hot-carrier photocatalysis: 《npj Computational Materials》2018年第1期389-395,共7页Luigi Ranno Stefano Dal Forno Johannes Lischner; S.D.F.and J.L.acknowledge support from EPSRC under Grant No.EP/N005244/1 and also from the Thomas Young Center under Grant No.TYC-101.Via J.L.‘s membership of the UK’s HEC Materials Chemistry Consortium,which is funded by EPSRC(EP/L000202);this work used the ARCHER UK National Supercomputing Service.S.D.F.and J.L.acknowledge support from EPSRC under Grant No.EP/N005244/1 and also from the Thomas Young Center under Grant No.TYC-101.; Computational design can accelerate the discovery of new materials with tailored properties,but applying this approach to plasmonic nanoparticles with diameters larger than a few nanometers is challenging as atomistic...; 关键词：APPLYING ALKALI DIAMETERS

Anomalous Channel Length Dependence of Hot-Carrier-Induced Saturation Drain Current Degradation in n-Type MOSFETs: 《Chinese Physics Letters》2015年第8期193-195,共3页张春伟刘斯扬孙伟锋周雷雷张艺苏巍张爱军刘玉伟胡久利何骁伟; Supported by Hong Kong,Macao and Taiwan Science&Technology Cooperation Program of China under Grant No2014DFH10190;the Distinguished Young Scientists Foundation of Jiangsu Province under Grant No BK20130021;the National Natural Science Foundation of China under Grant Nos 61204083 and 61306092;the Qing Lan Project; The dependencies of hot-carrier-induced degradations on the effective channel length Lch,eff are investigated for n-type metal-oxide-semiconductor field effect transistor （MOSFETs）. Our experiments find that, with d...; 关键词：Anomalous Channel Length Dependence of Hot-Carrier-Induced Saturation Drain Current Degradation in n-Type MOSFETs

Model of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET: 《Chinese Physics B》2014年第5期525-529,共5页雷晓艺刘红侠张月马晓华郝跃; Project supported by the National Basic Research Program of China(Grant No.2011CBA00606);the National Natural Science Foundation of China(Grant No.61106106); The degradation produced by hot carrier （HC） in ultra-deep sub-micron n-channel metal oxide semiconductor field effect transistor （nMOSFET） has been analyzed in this paper. The generation of negatively charged int...; 关键词：n-channel metal oxide semiconductor field effect transistor hot carder DEGRADATION lifetimemodel

Hot-carrier-induced on-resistance degradation of step gate oxide NLDMOS: 《Journal of Semiconductors》2010年第12期49-53,共5页韩雁张斌丁扣宝张世峰韩成功胡佳贤朱大中; Project supported by the National Science & Technology Major Project of China(No.2009ZX01033-001-003); The hot-carrier-induced on-resistance degradations of step gate oxide NLDMOS （SG-NLDMOS） transistors are investigated in detail by a DC voltage stress experiment, a TCAD simulation and a charge pumping test. For dif...; 关键词：SG-NLDMOS Ron degradation charge-pumping interface state positive oxide-trapped charge

Analysis of hot-carrier degradation in N-LDMOS transistor with step gate oxide被引量：1: 《Journal of Southeast University(English Edition)》2010年第1期17-20,共4页刘斯扬钱钦松孙伟锋; The Natural Science Foundation of Jiangsu Province(No.BK2008287);the Preresearch Project of the National Natural Science Foundation of Southeast University(No.XJ2008312); In order to minimize the hot-carrier effect（HCE）and maintain on-state performance in the high voltage N-type lateral double diffused MOS（N-LDMOS）, an optimized device structure with step gate oxide is proposed. Co...; 关键词：HOT-CARRIER degradation step gate oxide N-type lateral double diffused MOS（N-LDMOS）

Research into charge pumping method technique for hot-carrier degradation measurement of LDMOS: 《Journal of Semiconductors》2009年第10期46-50,共5页钱钦松刘斯扬孙伟锋时龙兴; supported by the Jiangsu Provincial Natural Science Foundation(No.BK2008287); A measuring technique based on the CP（charge pumping）method for hot-carrier degradation measurement of high voltage N-LDMOS is researched in depth.The impact of the special configuration on the CP spectrum and the g...; 关键词：CP measurements N-LDMOS HOT-CARRIER interface states

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