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Etch characteristics of Si_(1-x)Ge_x films in HNO_3:H_2O:HF被引量：1
《Science China(Technological Sciences)》2011年第10期2802-2807,共6页XUE ZhongYing WEI Xing LIU LinJie CHEN Da ZHANG Bo ZHANG Miao WANG Xi 
supported by the National Natural Science Foundation of China (Grant No. 61006088);the National Basic Research Program of China (973 Program) (Grant No. 2010CB832906);the Natural Sci-ence Foundation of Shanghai (Grant No. 10ZR1436100)
The etch characteristics of Si_1-xGex films in HNO3:H2O:HF were examined. The etch rate ratio (etch selectivity) between Si_1-xGex and Si escalated with the growth of HNO3 concentration at low concentration level, and...
关键词：Si_（1-x）Ge_x etch rate SELECTIVITY HNO_3 HF 
Gate oxide punching thru mechanism in plasma dry etching
《Science China(Technological Sciences)》2008年第11期1990-1994,共5页ZHANG QingZhao XIE ChangQing LIU Ming LI Bing CHEN BaoQin ZHU XiaoLi 
the National High-Tech Research and Development Program of China ("863" Project) (Grant No. 2006AA843134);the National Basic Research Program of China ("973" Project) (Grant No. 2007CB935302)
The punching thru mechanism of gate oxide (thickness about 15A) was investi- gated. Because of the thin thickness of gate oxide, gate oxide punching thru may easily happen during the plasma process. It was found that ...
关键词：PLASMA ETCH PUNCH thru GATE OXIDE 
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