The continually increasing number of silicon oxide(SiO2)and nitride(Si3N4)layers in 3D-NAND offers both motivations and challenges for developing all-in-one plasma etch solutions for etching SiO2 and Si3N4 at a select...
Conducting all-in-one etch process for 3D-NAND fabrication requires close etch rate(E/R)for SiO2 and Si3N4;however,to attain comparable and high etch rate for both materials is challenging.In this work,we performed fi...