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作品数:137被引量:165H指数:6
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相关作者:杨晓红王辰孔维民姜超美杨媛华更多>>
相关机构:北京大学新疆维吾尔自治区人民医院新疆医科大学首都医科大学附属北京朝阳医院更多>>
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Extrinsic equivalent circuit modeling of InP HEMTs based on full-wave electromagnetic simulation
《Chinese Physics B》2022年第4期638-646,共9页Shi-Yu Feng Yong-Bo Su Peng Ding Jing-Tao Zhou Song-Ang Peng Wu-Chang Ding Zhi Jin 
Project supported by the National Natural Science Foundation of China(Grant Nos.61434006 and 61704189);the Fund from the Youth Innovation Promotion Association of the Chinese Academy of Sciences。
With the widespread utilization of indium-phosphide-based high-electron-mobility transistors(InP HEMTs)in the millimeter-wave(mmW)band,the distributed and high-frequency parasitic coupling behavior of the device is pa...
关键词:extrinsic equivalent circuit modeling InP HEMT HFSS and ADS co-simulation S-PARAMETERS 
Effects of intrinsic and extrinsic noises on transposons kinetics
《Chinese Physics B》2018年第3期153-160,共8页Alssadig A M Yousif Lulu Lu Mengyan Ge Ying Xu Ya Jia 
Project supported by the National Natural Science Foundation of China(Grant Nos.11775091 and 11474117)
The absolute concentration robustness (ACR) steady state of a biochemical system can protect against changing a large concentration of the system's components. In this paper, a minimal model of autonomous-nonautono...
关键词:stability NOISES oscillation transposon kinetics 
Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method被引量:1
《Chinese Physics B》2016年第11期446-452,共7页耿苗 李培咸 罗卫军 孙朋朋 张蓉 马晓华 
A novel and accurate method is proposed to extract the intrinsic elements of the GaN high-electron-mobility transistor(HEMT) switch.The new extraction method is verified by comparing the simulated S-parameters with ...
关键词:switch intrinsic transistor verified drain embedding breakdown extrinsic modeled symmetric 
Characteristics of anomalous Hall effect in spin-polarized two-dimensional electron gases in the presence of both intrinsic,extrinsic,and external electric-field induced spin-orbit couplings被引量:1
《Chinese Physics B》2012年第2期469-476,共8页Liu Song Yan Yu-Zhen Hu Liang-Bin 
supported by the National Natural Science Foundation of China (Grant No.10874049)
The various competing contributions to the anomalous Hall effect in spin-polarized two-dimensional electron gases in the presence of both intrinsic, extrinsic and external electric-field induced spin-orbit coupling we...
关键词:anomalous Hall effect intrinsic spin orbit coupling extrinsic spin orbit coupling exter- nal electric-field induced spin-orbit coupling 
The determination of the x value in doped Hg_(1-x)Cd_x Te by transmission spectra
《Chinese Physics B》2012年第1期488-492,共5页Yue Fang-Yu Chen Lu Li Ya-Wei Sun Lin Yang Ping-Xiong Chu Jun-Hao 
Project supported by the National Basic Research Program of China(Grant No.2007CB924901);the Shanghai Leading Academic Discipline Project,China(Grant No.B411);the National Natural Science Foundation of China(Grant Nos.60906043,60990312,and 61076060);the Shanghai Municipal Commission of Science and Technology Project,China(Grant Nos.09ZR1409200,10ZR1409800,and 10JC1404600);the Specialized Research Fund for the Doctoral Program of Higher Education,China(Grant No.20090076120010);the Fundamental Research Funds for the Central Universities,China(Grant No.09ECNU)
Variable-temperature transmission/absorption spectra are measured on As-doped Hgl-xCdxTe grown by molec- ular beam epitaxy. The nonlinear temperature-dependent shift of the absorption edge is also observed, which is s...
关键词:intrinsic/extrinsic-doped HgCdTe bandedge parameters transmission spectra 
Influence of annealing conditions on impurity species in arsenic-doped HgCdTe grown by molecular beam epitaxy
《Chinese Physics B》2010年第11期555-561,共7页越方禹 陈璐 李亚巍 胡志高 孙琳 杨平雄 褚君浩 
Project supported by the National Basic Research Program of China (Grant No. 2007CB924901);Shanghai Leading Academic Discipline Project (Grant No. B411);National Natural Science Foundation of China (Grant No. 60906043);Shanghai Municipal Commission of Science and Technology Project (Grant Nos. 09ZR1409200 and 10ZR1409800);Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20090076120010);the Fundamental Research Funds for the Central Universities (Grant No. 09ECNU)
Based on our previous work, the influence of annealing conditions on impurity species in in-situ arsenic (As)- doped Hg1-xCdxTe (x ≈ 0.3) grown by molecular beam epitaxy has been systematically investigated by mo...
关键词:As-doped HgCdTe annealing influence extrinsic/intrinsic impurities modulated photoluminescence spectra 
Dissipationless spin-Hall current contribution in the extrinsic spin-Hall effect被引量:2
《Chinese Physics B》2009年第7期2981-2987,共7页颜玉珍 李辉武 胡梁宾 
Project supported by the National Natural Science Foundation of China (Grant No 10874049);the State Key Program for Basic Research of China (Grant No 2007CB925204);the Natural Science Foundation of Guangdong Province of China (Grant No07005834)
This paper shows that a substantial amount of dissipationless spin-Hall current contribution may exist in the extrinsic spin-Hall effect,which originates from the spin-orbit coupling induced by the applied external el...
关键词:extrinsic spin-Hall effect spin-orbit coupling induced by external electric fields dissi-pationless spin current 
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