Project supported by the National Natural Science Foundation of China(Grant Nos.61434006 and 61704189);the Fund from the Youth Innovation Promotion Association of the Chinese Academy of Sciences。
With the widespread utilization of indium-phosphide-based high-electron-mobility transistors(InP HEMTs)in the millimeter-wave(mmW)band,the distributed and high-frequency parasitic coupling behavior of the device is pa...
Project supported by the National Natural Science Foundation of China(Grant Nos.11775091 and 11474117)
The absolute concentration robustness (ACR) steady state of a biochemical system can protect against changing a large concentration of the system's components. In this paper, a minimal model of autonomous-nonautono...
A novel and accurate method is proposed to extract the intrinsic elements of the GaN high-electron-mobility transistor(HEMT) switch.The new extraction method is verified by comparing the simulated S-parameters with ...
supported by the National Natural Science Foundation of China (Grant No.10874049)
The various competing contributions to the anomalous Hall effect in spin-polarized two-dimensional electron gases in the presence of both intrinsic, extrinsic and external electric-field induced spin-orbit coupling we...
Project supported by the National Basic Research Program of China(Grant No.2007CB924901);the Shanghai Leading Academic Discipline Project,China(Grant No.B411);the National Natural Science Foundation of China(Grant Nos.60906043,60990312,and 61076060);the Shanghai Municipal Commission of Science and Technology Project,China(Grant Nos.09ZR1409200,10ZR1409800,and 10JC1404600);the Specialized Research Fund for the Doctoral Program of Higher Education,China(Grant No.20090076120010);the Fundamental Research Funds for the Central Universities,China(Grant No.09ECNU)
Variable-temperature transmission/absorption spectra are measured on As-doped Hgl-xCdxTe grown by molec- ular beam epitaxy. The nonlinear temperature-dependent shift of the absorption edge is also observed, which is s...
Project supported by the National Basic Research Program of China (Grant No. 2007CB924901);Shanghai Leading Academic Discipline Project (Grant No. B411);National Natural Science Foundation of China (Grant No. 60906043);Shanghai Municipal Commission of Science and Technology Project (Grant Nos. 09ZR1409200 and 10ZR1409800);Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20090076120010);the Fundamental Research Funds for the Central Universities (Grant No. 09ECNU)
Based on our previous work, the influence of annealing conditions on impurity species in in-situ arsenic (As)- doped Hg1-xCdxTe (x ≈ 0.3) grown by molecular beam epitaxy has been systematically investigated by mo...
Project supported by the National Natural Science Foundation of China (Grant No 10874049);the State Key Program for Basic Research of China (Grant No 2007CB925204);the Natural Science Foundation of Guangdong Province of China (Grant No07005834)
This paper shows that a substantial amount of dissipationless spin-Hall current contribution may exist in the extrinsic spin-Hall effect,which originates from the spin-orbit coupling induced by the applied external el...