This work was financially supported by the National Natural Science Foundation of China(Grant Nos.11864004 and 52072080);The author also thanks to the fund(Grant No.20KF-16)from the Key Laboratory of New Processing Technology for Nonferrous Metal&Materials,Ministry of Education/Guangxi Key Laboratory of Optical and Electronic Materials and Devices,Guilin University of Technology,Guilin(541004),China.
The NaNbO_(3) antiferroelectrics have been considered as a potential candidate for dielectric capacitorsapplications. However, the high-electric-field-unstable antiferroelectric phase resulted in low energystorage den...