supported by the National Natural Science Foundation of China(Nos.61274077,61474031,61464003);the Guangxi Natural Science Foundation(Nos.2013GXNSFGA019003,2013GXNSFAA019335);the Project(No.9140C140101140C14069);the Innovation Project of GUET Graduate Education(No.YJCXS201529);the National Science&Technology Major Project of China(No.2011ZX02708-003)
The impact of nitridation and sulfur passivation for Ino.s3Gao.47As surfaces on the A1/A1203/InGaAs MOS capacitors properties was investigated by comparing the characteristics of frequency dispersion and hysteresis, c...
supported by the State Key Development Program for Basic Research of China(No.2006CB302704)
The effect of Si (100) surface S passivation was investigated. A thick film with a high roughness value was formed on the Si surface treated by (NH4)2S solution, which was attributed to physical adsorption of S at...