NH4

作品数:151被引量:292H指数:8
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相关领域:理学更多>>
相关作者:万林生陈红亮柳士忠周立群杨洁红更多>>
相关机构:中国科学院中南大学重庆大学江西理工大学更多>>
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相关基金:国家自然科学基金国家重点基础研究发展计划国家重点实验室开放基金国家科技支撑计划更多>>
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The effect of nitridation and sulfur passivation for In0.53Ga0.47As surfaces on their Al/Al2O3/InGaAs MOS capacitors properties
《Journal of Semiconductors》2016年第2期155-159,共5页林子曾 曹明民 王盛凯 李琦 肖功利 高喜 刘洪刚 李海鸥 
supported by the National Natural Science Foundation of China(Nos.61274077,61474031,61464003);the Guangxi Natural Science Foundation(Nos.2013GXNSFGA019003,2013GXNSFAA019335);the Project(No.9140C140101140C14069);the Innovation Project of GUET Graduate Education(No.YJCXS201529);the National Science&Technology Major Project of China(No.2011ZX02708-003)
The impact of nitridation and sulfur passivation for Ino.s3Gao.47As surfaces on the A1/A1203/InGaAs MOS capacitors properties was investigated by comparing the characteristics of frequency dispersion and hysteresis, c...
关键词:N2 plasma (NH4)2Sx treatment interface properties MOS capacitors 
(NH_4)_2S treatment of the Si (100) surface and its effects on Al/Si Schottky barrier heights
《Journal of Semiconductors》2009年第8期56-59,共4页胡爱斌 王文武 徐秋霞 
supported by the State Key Development Program for Basic Research of China(No.2006CB302704)
The effect of Si (100) surface S passivation was investigated. A thick film with a high roughness value was formed on the Si surface treated by (NH4)2S solution, which was attributed to physical adsorption of S at...
关键词:Schottky barrier (NH4)2S treatment dangling bonds I-V 
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