supported by the National Natural Science Foundation of China(Nos.91433108,61301023)
We designed two transmission-mode GaAs/AIGaAs photocathodes with different AlxGa1-xAs layers, one has an AlxGal-xAs layer with the Al component ranging from 0.9 to 0, and the other has a fixed AI component 0.7. Using ...
By calculating the energy distribution of electrons reaching the photocathode surface and solving the Schrodinger equation that describes the behavior of an electron tunneling through the surface potential barrier,we ...
The effect of changing Be doping concentration in GaAs layer on the integrated photosensitivity for nega- tive-electron-affinity GaAs photocathodes is investigated. Two GaAs samples with the monolayer structure and th...