PYRAMIDS

作品数:33被引量:14H指数:2
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相关领域:理学更多>>
相关作者:朱孔军裘进浩李子全张朔陈建康更多>>
相关机构:无锡恒业电热电器有限公司南京航空航天大学江苏海洋大学上海交通大学更多>>
相关期刊:《Journal of Wuhan University of Technology(Materials Science)》《中学科技》《学生·家长·社会(上)》《英语教师》更多>>
相关基金:国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划中国博士后科学基金更多>>
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Influence of adatom migration on wrinkling morphologies of AlGaN/GaN micro-pyramids grown by selective MOVPE
《Chinese Physics B》2017年第6期449-453,共5页陈杰 黄溥曼 韩小标 潘郑州 钟昌明 梁捷智 吴志盛 刘扬 张佰君 
supported by the National Natural Science Foundation of China(Grant Nos.61274039 and 61574173);the National Key Research and Development Program,China(Grant No.2016YFB0400105);the International Science and Technology Collaboration Program of Guangdong Province,China(Grant No.2013B051000041);the International Science and Technology Collaboration Program of Guangzhou City,China(Grant No.2016201604030055);the National High Technology Research and Development Program of China(Grant No.2014AA032606);Guangdong Provincial Natural Science Foundation,China(Grant No.2015A030312011);the Science&Technology Plan of Guangdong Province,China(Grant Nos.2015B090903062,2015B010132007,and2015B010129010);the Science and Technology Plan of Guangzhou,China(Grant No.201508010048);the Science and Technology Plan of Foshan,China(Grant No.201603130003);Guangdong–Hong Kong Joint Innovation Project of Guangdong Province,China(Grant No.2014B050505009);the Opened Fund of the State Key Laboratory on Integrated Optoelectronics(Grant No.IOSKL2014KF17);the Zhuhai Key Technology Laboratory of Wide Bandgap Semiconductor Power Electronics,Sun Yat-sen University(Grant No.20167612042080001)
Ga N micro-pyramids with AlGaN capping layer are grown by selective metal–organic–vapor phase epitaxy(MOVPE). Compared with bare Ga N micro-pyramids, AlGaN/Ga N micro-pyramids show wrinkling morphologies at the bo...
关键词:metal-organic-vapor phase epitaxy selective area growth migration length 
GaN hexagonal pyramids formed by a photo-assisted chemical etching method
《Chinese Physics B》2014年第5期588-593,共6页张士英 修向前 华雪梅 谢自力 刘斌 陈鹏 韩平 陆海 张荣 郑有炓 
Project supported by the National Basic Research Program of China(Grant Nos.2011CB301900,2012CB619304,and 2010CB327504);the National High Technology Research and Development Program of China(Grant No.2011AA03A103);the National Nature Science Foundation of China(Grant Nos.60990311,60906025,60936004,and 61176063);the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BK2011010 and BK2009255)
A series of experiments were conducted to systematically study the effects of etching conditions on GaN by a con-venient photo-assisted chemical (PAC) etching method. The solution concentration has an evident influe...
关键词:hexagonal pyramids GAN photo-assisted chemical etching 
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