supported by the National Natural Science Foundation of China(Grant Nos.61274039 and 61574173);the National Key Research and Development Program,China(Grant No.2016YFB0400105);the International Science and Technology Collaboration Program of Guangdong Province,China(Grant No.2013B051000041);the International Science and Technology Collaboration Program of Guangzhou City,China(Grant No.2016201604030055);the National High Technology Research and Development Program of China(Grant No.2014AA032606);Guangdong Provincial Natural Science Foundation,China(Grant No.2015A030312011);the Science&Technology Plan of Guangdong Province,China(Grant Nos.2015B090903062,2015B010132007,and2015B010129010);the Science and Technology Plan of Guangzhou,China(Grant No.201508010048);the Science and Technology Plan of Foshan,China(Grant No.201603130003);Guangdong–Hong Kong Joint Innovation Project of Guangdong Province,China(Grant No.2014B050505009);the Opened Fund of the State Key Laboratory on Integrated Optoelectronics(Grant No.IOSKL2014KF17);the Zhuhai Key Technology Laboratory of Wide Bandgap Semiconductor Power Electronics,Sun Yat-sen University(Grant No.20167612042080001)
Ga N micro-pyramids with AlGaN capping layer are grown by selective metal–organic–vapor phase epitaxy(MOVPE). Compared with bare Ga N micro-pyramids, AlGaN/Ga N micro-pyramids show wrinkling morphologies at the bo...
Project supported by the National Basic Research Program of China(Grant Nos.2011CB301900,2012CB619304,and 2010CB327504);the National High Technology Research and Development Program of China(Grant No.2011AA03A103);the National Nature Science Foundation of China(Grant Nos.60990311,60906025,60936004,and 61176063);the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BK2011010 and BK2009255)
A series of experiments were conducted to systematically study the effects of etching conditions on GaN by a con-venient photo-assisted chemical (PAC) etching method. The solution concentration has an evident influe...