supported by the National Natural Science Foundation of China(Grant Nos.61322408,61221004,61422407,61334007,61474136,61274091,61376112,61306117,61106119,and 61106082);National Basic Research Program of China(Grant No.2011CBA00602);National High Technology Research and Development Program of China(Grant Nos.2014AA032900,2013AA030801,2011AA010401 and 2011AA-010402)
In this paper, different electrical measurement and operation methods of resistive random access memory (RRAM) have been summarized, including voltage sweeping mode (VSM), current sweeping mode (CSM), co lstant ...