The electrical performance including breakdown voltage and turn-off speed of SOI-LIGBT is improved by incorporating a resistive field plate (RFP) and a p-MOSFET.The p-MOSFET is controlled by a signal detected from a p...
IGBT with high switching speed is described based on the dynamic controlled anode- short,which incorpo- rates a normally- on,p- MOSFET controlled by the anode voltage indirectly.This device works just as normal when ...