DETECTIVITY

作品数:31被引量:82H指数:5
导出分析报告
相关领域:电子电信更多>>
相关作者:尹成芳柯式镇许巍张雷洁陶婕更多>>
相关机构:中国石油大学(北京)信息技术实验室更多>>
相关期刊:《Science China Chemistry》《Science Bulletin》《Defence Technology(防务技术)》《npj Flexible Electronics》更多>>
相关基金:国家自然科学基金中国博士后科学基金山西省自然科学基金更多>>
-

检索结果分析

结果分析中...
选择条件:
  • 期刊=Journal of Semiconductorsx
条 记 录,以下是1-2
视图:
排序:
Visible-to-near-infrared photodetectors based on SnS/SnSe_(2)and SnSe/SnSe_(2)p−n heterostructures with a fast response speed and high normalized detectivity
《Journal of Semiconductors》2024年第3期76-83,共8页Xinfa Zhu Weishuai Duan Xiancheng Meng Xiyu Jia Yonghui Zhang Pengyu Zhou Mengjun Wang Hongxing Zheng Chao Fan 
supported by the Jilin Scientific and Technological Development Program(Grant No.20230101286JC);National Natural Science Foundation of China(Grant Nos.61975051,6227503,and 52002110);Hebei Provincial Department of Education Innovation Ability Training Funding Project for graduate students.
The emergent two-dimensional(2D)material,tin diselenide(SnSe_(2)),has garnered significant consideration for its potential in image capturing systems,optical communication,and optoelectronic memory.Nevertheless,SnSe_(...
关键词:two-dimensional materials tin diselenide HETEROSTRUCTURES broad-spectrum photodetectors 
Fabrication and characterization of an AlGaN/PZT detector被引量:1
《Journal of Semiconductors》2010年第12期87-89,共3页张燕 孙璟兰 王妮丽 韩莉 刘向阳 李向阳 孟祥建 
Project supported by the National Natural Science Foundation of China(No.60807037)
Design, fabrication and characterization of a novel two-color detector for ultraviolet and infrared applications are reported. The detector has a simple multilayer structure composed of n-Al0.3Ga0.7N/i-GaN/p- GaN/SiO2...
关键词:A1GaN/PZT dual-band detector UV/IR RESPONSIVITY DETECTIVITY 
检索报告 对象比较 聚类工具 使用帮助 返回顶部