supported by National Basic Research Program of China (973 Program) (Grant No. 2015CB352403);National Natural Science Foundation of China (Grant Nos. 61261160502, 61272099, 61303012, 61572323, 61628208);Scientific Innovation Act of STCSM (Grant No. 13511504200);EU FP7 CLIMBER Project (Grant No. PIRSES-GA-2012-318939);CCF-Tencent Open Fund
With the emerging of 3 D-stacking technology, the dynamic random-access memory(DRAM)can be stacked on chips to architect the DRAM last level cache(LLC). Compared with static randomaccess memory(SRAM), DRAM is la...