GIDL

作品数：16被引量：12H指数：2
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相关领域：电子电信自动化与计算机技术更多>>
相关作者：陈海峰郝跃马晓华曹艳荣朱慧珑更多>>
相关机构：上海华力集成电路制造有限公司上海华力微电子有限公司西安电子科技大学华东师范大学更多>>
相关期刊：《Chinese Physics B》《Journal of Semiconductors》《电子与封装》《微电子学》更多>>
相关基金：国家自然科学基金国家高技术研究发展计划上海市科学技术委员会资助项目国家科技重大专项更多>>
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Device physics and design of FD-SOI JLFET with step-gate-oxide structure to suppress GIDL effect
《Chinese Physics B》2021年第4期497-501,共5页Bin Wang Xin-Long Shi Yun-Feng Zhang Yi Chen Hui-Yong Hu Li-Ming Wang 
Project supported by the National Natural Science Foundation of China(Grant No.61704130);the Fund from the Science and Technology on Analog Integrated Circuit Laboratory,China(Grant No.JCKY2019210C029)。
A novel n-type junctionless field-effect transistor(JLFET) with a step-gate-oxide(SGO) structure is proposed to suppress the gate-induced drain leakage(GIDL) effect and off-state current I_(off).Introducing a 6-nm-thi...
关键词：junctionless field-effect transistor(FET) gate-induced drain leakage(GIDL) step-gate-oxide offstate current 
Enhancement of off-state characteristics in junctionless field effect transistor using a field plate
《Chinese Physics B》2018年第6期424-428,共5页Bin Wang He-Ming Zhang Hui-Yong Hu and Xiao-Wei Shi 
supported by the National Natural Science Foundation of China(Grant No.61704130);the Fundamental Research Funds for the Central Universities,China(Grant No.20101166085);the Opening Project of Key Laboratory of Microelectronic Devices&Integrated Technology from Institute of Microelectronics,Chinese Academy of Sciences(Grant No.90109162905)
In this paper, a novel junctionless field effect transistor（JLFET） is proposed. In the presence of a field plate between gate and drain, the gate-induced drain leakage（GIDL） effect is suppressed due to the decreas...
关键词：lateral band to band tunneling GIDL off-state current field plate 
Investigation of the characteristics of GIDL current in 90nm CMOS technology被引量：2
《Chinese Physics B》2006年第3期645-648,共4页陈海峰 郝跃 马晓华 张进城 李康 曹艳荣 张金凤 周鹏举 
Project supported by the National High Technology Research and Development Program of China （Grant No 2003AA1Z1630） and the National Natural Science Foundation of China （Grant No 60376024）.
A specially designed experiment is performed for investigating gate-induced drain leakage （GIDL） current in 90nm CMOS technology using lightly-doped drain （LDD） NMOSFET. This paper shows that the drain bias VD has...
关键词：GIDL 90nm CMOS technology band-to-band tunnelling 
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