云南高校图书馆联盟文献共享服务平台- GIDL

GIDL: 作品数：16被引量：12H指数：2; 导出分析报告; 相关领域：电子电信自动化与计算机技术更多>>; 相关作者：陈海峰郝跃马晓华曹艳荣朱慧珑更多>>; 相关机构：上海华力集成电路制造有限公司上海华力微电子有限公司西安电子科技大学华东师范大学更多>>; 相关期刊：《Chinese Physics B》《Journal of Semiconductors》《电子与封装》《微电子学》更多>>; 相关基金：国家自然科学基金国家高技术研究发展计划上海市科学技术委员会资助项目国家科技重大专项更多>>

Device physics and design of FD-SOI JLFET with step-gate-oxide structure to suppress GIDL effect: 《Chinese Physics B》2021年第4期497-501,共5页Bin Wang Xin-Long Shi Yun-Feng Zhang Yi Chen Hui-Yong Hu Li-Ming Wang; Project supported by the National Natural Science Foundation of China(Grant No.61704130);the Fund from the Science and Technology on Analog Integrated Circuit Laboratory,China(Grant No.JCKY2019210C029)。; A novel n-type junctionless field-effect transistor(JLFET) with a step-gate-oxide(SGO) structure is proposed to suppress the gate-induced drain leakage(GIDL) effect and off-state current I_(off).Introducing a 6-nm-thi...; 关键词：junctionless field-effect transistor(FET) gate-induced drain leakage(GIDL) step-gate-oxide offstate current

一种新型降低GIDL的纳米线环栅场效应晶体管: 《微电子学》2020年第6期894-898,共5页唐雅欣孙亚宾李小进石艳玲; 国家科技重大专项资助项目(2016ZX02301003);国家自然科学基金资助项目(61574056,61704056);上海扬帆计划资助项目(YF1404700);上海市科学技术委员会资助项目(14DZ2260800)。; 提出了一种可以有效降低环栅晶体管栅致漏极泄漏(GIDL)的新型非对称沟道介质环场效应环栅(GAA)晶体管。位于漏端附近的沟道介质环结构可有效降低载流子沿沟道方向的带间隧穿几率,从而显著改善环栅器件在关态时的栅致漏极泄漏电流情况。3...; 关键词：沟道介质环栅致漏极泄漏电流纵向带间隧穿环栅晶体管

LDD注入工艺对40nm中压NMOS器件HCI-GIDL效应的优化: 《微电子学》2020年第5期738-742,共5页闫翼辰蔡小五魏兰英蔡巧明曹杨杜林; 国家重点研究发展计划项目(2016YFB0901804)。; 基于40 nm CMOS工艺,研究了8 V MV NMOS器件的HCI-GIDL效应的优化。分析了增大LDD注入倾角、二次LDD注入由P注入变为As注入两种措施对电学特性的影响。测试结果表明,两种措施均对器件的衬底电流、关态泄漏电流产生较好效果。利用TCAD工...; 关键词：HCI-GIDL效应 NMOS器件 LDD注入

Enhancement of off-state characteristics in junctionless field effect transistor using a field plate: 《Chinese Physics B》2018年第6期424-428,共5页Bin Wang He-Ming Zhang Hui-Yong Hu and Xiao-Wei Shi; supported by the National Natural Science Foundation of China(Grant No.61704130);the Fundamental Research Funds for the Central Universities,China(Grant No.20101166085);the Opening Project of Key Laboratory of Microelectronic Devices&Integrated Technology from Institute of Microelectronics,Chinese Academy of Sciences(Grant No.90109162905); In this paper, a novel junctionless field effect transistor（JLFET） is proposed. In the presence of a field plate between gate and drain, the gate-induced drain leakage（GIDL） effect is suppressed due to the decreas...; 关键词：lateral band to band tunneling GIDL off-state current field plate

短沟MOS器件GIDL漏电的改善: 《电子与封装》2018年第6期38-41,共4页顾祥陈天洪根深赵文彬; 随着MOSFET栅氧厚度的逐渐减薄,栅致漏极泄漏(GIDL)电流呈指数级增加,当工艺进入超深亚微米节点,器件的栅氧厚度不足2 nm,短沟器件的GIDL效应非常强烈。研究了相关工艺对器件GIDL效应的影响,发现了GIDL的主要泄漏机制。通过模拟仿真和...; 关键词：栅氧栅致漏极泄漏 HALO LDD RTA

Performance analysis of SiGe double-gate N-MOSFET: 《Journal of Semiconductors》2017年第4期38-44,共7页A.Singh D.Kapoor R.Sharma; The major purpose of this paper is to find an alternative configuration that not only minimizes the limitations of single-gate（SG） MOSFETs but also provides the better replacement for future technology.In this paper...; 关键词：double gate MOSFET DIBL GIDL volume inversion SiGe Genius tool

Novel Operation Mechanism of Capacitorless DRAM Cell Using Impact Ionization and GIDL Effects被引量：1: 《Computer Technology and Application》2013年第7期351-355,共5页Huibin Tao Jianing Hou Zhibiao Shao; A novel operation mechanism of capacitorless SOl-DRAM （silicon on insulator dynamic random access memory） cell using impact ionization and GIDL （gated-induce drain leakage） effects for write ＂1＂ operation was pr...; 关键词：DRAM CELL IONIZATION GIDL effects.

GIDL current degradation in LDD nMOSFET under hot hole stress: 《Journal of Semiconductors》2011年第11期43-46,共4页陈海峰马晓华过立新杜慧敏; supported by the Specialized Research Fund of the Education Department of Shaanxi Province,China(No.11JK0902);the Innovational Fund for Applied Materials of Xi'an,China(No.XA-AM-201012); The degradation of gate-induced drain leakage （GIDL） current in LDD nMOSFET under hot holes stress is studied in depth based on its parameter IDIFF. IDIFF is the difference of GIDL currents measured under two condit...; 关键词：GIDL hot hole LDD band-to-band

Degradation of ultra-thin gate oxide LDD NMOSFET under GIDL stress: 《Journal of Semiconductors》2009年第4期34-37,共4页胡仕刚郝跃曹艳荣马晓华吴笑峰陈炽周清军; supported by the National Natural Science Foundation of China (Nos. 60736033, 60506020); The degradation of device under GIDL （gate-induced drain leakage current） stress has been studied using LDD NMOSFETs with 1.4 nm gate oxides. Experimental result shows that the degradation of device parameters depen...; 关键词：GIDL interface traps direct tunneling SILC

Hot-Carrier Stress Effects on GIDL and SILC in 90nm LDD-MOSFET with Ultra-Thin Gate Oxide被引量：3: 《Chinese Physics Letters》2009年第1期292-295,共4页胡仕刚郝跃马晓华曹艳荣陈炽吴笑峰; Supported by the National Natural Science Foundation of China under Grant Nos 60736033 and 60506020.; Hot-carrier degradation for 90 nm gate length lightly-doped drain （LDD） NMOSFET with ultra-thin （1.4 nm） gate oxide is investigated under the low gate voltage stress （LGVS） and peak substrate current （Isub max...; 关键词：field emission molybdenum dioxide enhancement factor

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