短沟MOS器件GIDL漏电的改善  

The Improvement of Gate-Induced-Drain-leakage(GIDL) Current in Short-channel MOSFET

作　　者：顾祥[1] 陈天 洪根深[1] 赵文彬[1] GU Xiang;CHENG Tian;HONG Genshen;ZHAO Wenbin(China Electronics Technology Group Corporation No.5$ Research Institute,Wuxi 214035,China;CR Microelectronics,Wuxi 214061,China)

机构地区：[1]中国电子科技集团公司第五十八研究所,江苏无锡214035 [2]华润微电子有限公司,江苏无锡214061

出　　处：《电子与封装》2018年第6期38-41,共4页Electronics & Packaging

摘　　要：随着MOSFET栅氧厚度的逐渐减薄,栅致漏极泄漏(GIDL)电流呈指数级增加,当工艺进入超深亚微米节点,器件的栅氧厚度不足2 nm,短沟器件的GIDL效应非常强烈。研究了相关工艺对器件GIDL效应的影响,发现了GIDL的主要泄漏机制。通过模拟仿真和工艺试验,证明了Halo注入工艺相对于其他工艺对GIDL效应的影响更大,降低Halo注入剂量是相对最优的工艺改善方案。The gate-induced drain leakage（GIDL） current is increased exponentially with the reduction of the gate insulator thickness. While process enters into the ultra deep sub-micro nodes, the thickness of Gate-oxide thickness is about less than 2 nm, and the short channel device＇s GIDL effect is enhanced. This paper investigates the related process factors affecting GIDL effect, discovering the major concern of GIDL current.Process experiment and simulation results all improve that Halo implant process is bigger influence more than other process step, and reducing Halo implant dose is the better process improving method.

关 键 词：栅氧 栅致漏极泄漏 HALO LDD RTA 

分 类 号：TN306[电子电信—物理电子学]