Supported by the National Basic Research Program of China under Grant No 2011CBA00606, the National Natural Science Foundation of China under Grant Nos 61334002, 61106106 and 61474091, the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory under Grant No ZHD201206, the New Ex- periment Development Funds for Xidian University, and the Fundamental Research Funds for the Central Universities under Grant No K5051325002.
With the rapid development of semiconductor technology, the feature size of MOSFETs has been aggressively scaled down. The thickness of gate di- electric reduces accordingly, which causes significant gate leakage curr...
We present the transition of the universe from the early decelerating phase to the current accelerating phase with viscous fluid and time-dependent cosmological constant (A) as a source of matter in Bianchi- V spaceti...
Supported by the Knowledge Innovation Project of Chinese Academy of Sciences under Grant No KJCX2-SW-W26, and the National Natural Science Foundation of China under Grant Nos 90406017 and 10427402.
Metal-tip/Pr0.7Ca0.3MnO3/Pt devices possess two types of I-V hysteresis: clockwise vs counter clockwise depending on the tip materials. The criteria for categorization of these two types of devices can be simply base...