I-V

作品数:544被引量:1029H指数:13
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相关作者:李昭东孙新军雍岐龙胡晓君王新洪更多>>
相关机构:中国科学院哈尔滨工业大学西安交通大学上海大学更多>>
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  • 期刊=Chinese Physics Lettersx
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Electron Trap Energy Distribution in HfO2 by the Discharge-Based Pulse I-V Technique
《Chinese Physics Letters》2014年第12期119-122,共4页郑雪峰 范爽 康迪 张建坤 曹艳荣 马晓华 郝跃 
Supported by the National Basic Research Program of China under Grant No 2011CBA00606, the National Natural Science Foundation of China under Grant Nos 61334002, 61106106 and 61474091, the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory under Grant No ZHD201206, the New Ex- periment Development Funds for Xidian University, and the Fundamental Research Funds for the Central Universities under Grant No K5051325002.
With the rapid development of semiconductor technology, the feature size of MOSFETs has been aggressively scaled down. The thickness of gate di- electric reduces accordingly, which causes significant gate leakage curr...
Cosmological Constant Dominated Transit Universe from the Early Deceleration Phase to the Current Acceleration Phase in Bianchi-V Spacetime被引量:1
《Chinese Physics Letters》2012年第7期298-302,共5页YADAV Anil Kumar 
We present the transition of the universe from the early decelerating phase to the current accelerating phase with viscous fluid and time-dependent cosmological constant (A) as a source of matter in Bianchi- V spaceti...
关键词:UNIVERSE behaviour PHASE 
Clockwise vs Counter-Clockwise I-V Hysteresis of Point-Contact Metal-Tip/Pr0.7 Ca0.3MnO3/Pt Devices被引量:2
《Chinese Physics Letters》2010年第2期256-259,共4页刚建雷 黎松林 廖昭亮 孟洋 梁学锦 陈东敏 
Supported by the Knowledge Innovation Project of Chinese Academy of Sciences under Grant No KJCX2-SW-W26, and the National Natural Science Foundation of China under Grant Nos 90406017 and 10427402.
Metal-tip/Pr0.7Ca0.3MnO3/Pt devices possess two types of I-V hysteresis: clockwise vs counter clockwise depending on the tip materials. The criteria for categorization of these two types of devices can be simply base...
关键词:Electronics and devices Semiconductors Condensed matter: structural mechanical & thermal Chemical physics and physical chemistry 
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