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作品数：415被引量：518H指数：11
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Rogue waves of a(3+1)-dimensional BKP equation
《Chinese Physics B》2022年第12期21-26,共6页Yu-Qiang Yuan Xiao-Yu Wu Zhong Du 
Project supported by the Fundamental Research Funds for the Central Universities(Grant Nos.2021XJLX01 and BLX201927);China Post-doctoral Science Foundation(Grant No.2019M660491);the Natural Science Foundation of Hebei Province,China(Grant No.A2021502003)
We investigate certain rogue waves of a(3+1)-dimensional BKP equation via the Kadomtsev-Petviashili hierarchy reduction method.We obtain semi-rational solutions in the determinant form,which contain two special intera...
关键词：(3+1)-dimensional BKP equation Kadomtsev-Petviashvili hierarchy reduction interaction rogue wave lump 
Hysteresis loss reduction in self-bias FeSi/SrFe_(12)O_(19)soft magnetic composites
《Chinese Physics B》2022年第2期576-580,共5页Shuangjiu Feng Jiangli Ni Feng Hu Xucai Kan Qingrong Lv Xiansong Liu 
supported by the National Natural Science Foundation of China(Grant Nos.51872004 and 51802002);the Key Program of the Education Department of Anhui Province,China(Grant No.KJ2019ZD03);the Science Foundation of the National Key Laboratory of Science and Technology on Advanced Composites in Specials Environments(Grant No.6142905202112)。
The magnetic field provided by magnetized SrFe_(12)O_(19)particles in FeSi/SrFe_(12)O_(19)composites is used to replace the applied transverse magnetic field,which successfully reduces the magnetic loss of the composi...
关键词：soft magnetic composites FESI SrFe_(12)O_(19) magnetic loss 
Low-bias negative differential conductance controlled by electrode separation
《Chinese Physics B》2016年第12期520-524,共5页衣晓华 刘然 毕俊杰 焦扬 王传奎 李宗良 
Project supported by the National Natural Science Foundation of China(Grant Nos.11374195 and 11405098);the Natural Science Foundation of Shandong Province,China(Grant No.ZR2013FM006)
The electronic transport properties of a single thiolated arylethynylene molecule with 9,10-dihydroanthracene core, denoted as TADHA, is studied by using non-equilibrium Green＇s function formalism combined with ab in...
关键词：molecular junctions negative differential conductance electrode distance 
Effect of supply voltage and body-biasing on single-event transient pulse quenching in bulk fin field-effect-transistor process被引量：2
《Chinese Physics B》2016年第4期495-500,共6页于俊庭 陈书明 陈建军 黄鹏程 宋睿强 
supported by the National Natural Science Foundation of China(Grant Nos.61376109,61434007,and 61176030)
Charge sharing is becoming an important topic as the feature size scales down in fin field-effect-transistor （FinFET） technology. However, the studies of charge sharing induced single-event transient （SET） pulse q...
关键词：body-biasing SET pulse quenching charge sharing bulk FinFET process 
Superconducting quantum interference devices with different damped junctions operated in directly coupled current-and voltage-bias modes
《Chinese Physics B》2014年第11期602-605,共4页曾佳 张懿 邱阳 张国峰 王永良 孔祥燕 谢晓明 
supported by the Strategic Priority Research Program(B) of the Chinese Academy of Sciences(Grant No.XDB04010100);One Hundred Person Project of the Chinese Academy of Sciences
We investigate niobium thin film superconducting quantum interference devices （SQUIDs） with different Steward- McCumber parameters βc operated in both current- and voltage-bias modes. We experimentally prove that t...
关键词：SQUID noise bias mode Steward-McCumber parameter 
Positive gate-bias temperature instability of ZnO thin-film transistor被引量：2
《Chinese Physics B》2014年第6期602-607,共6页刘玉荣 苏晶 黎沛涛 姚若河 
supported by the National Natural Science Foundation of China(Grant Nos.61076113 and 61274085);the Research Grants Council of Hong Kong,China(Grant No.7133/07E)
The positive gate-bias temperature instability of a radio frequency （RF） sputtered ZnO thin-film transistor （ZnO TFT） is investigated. Under positive gate-bias stress, the saturation drain current and OFF-state cu...
关键词：thin-film transistors （TFTs） zinc oxide gate-bias instability threshold-voltage shift 
Zero-bias high-responsivity high-bandwidth top-illuminated germanium p–i–n photodetectors
《Chinese Physics B》2014年第3期640-644,共5页李冲 薛春来 刘智 成步文 李传波 王启明 
We report efficient zero-bias high-speed top-illuminated p-i-n photodiodes （PDs） with high responsivity fabricated with germanium （Ge） films grown directly on silicon-on-insulator （SOI） substrates. For a 15 p-m-...
关键词：GERMANIUM PHOTODETECTORS integrated optoelectronics optical interconnections 
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