云南高校图书馆联盟文献共享服务平台- MOS2

MOS2: 作品数：1019被引量：2678H指数：18; 导出分析报告; 相关领域：理学更多>>; 相关作者：陈建敏周惠娣胡献国李长生陈卫祥更多>>; 相关机构：中国科学院哈尔滨工业大学湘潭大学中国科学院大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划中国博士后科学基金中央高校基本科研业务费专项资金更多>>

Vacuum current-carrying tribological behavior of MoS2-Ti films with different conductivities: 《Chinese Physics B》2022年第6期563-571,共9页Lu-Lu Pei Peng-Fei Ju Li Ji Hong-Xuan Li Xiao-Hong Liu Hui-Di Zhou Jian-Min Chen; supported by the National Natural Science Foundation of China(Grant No.51775537);Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.Y202084)。; Current-carrying sliding is widely applied in aerospace equipment,but it is limited by the poor lubricity of the present materials and the unclear tribological mechanism.This study demonstrated the potential of MoS_(2...; 关键词：MoS2-Ti films CONDUCTIVITY current-carrying tribological behavior VACUUM

Broadband absorption enhancement with ultrathin MoS2 film in the visible regime: 《Chinese Physics B》2021年第2期319-323,共5页Jun Wu; Project supported by the National Natural Science Foundation of China(Grant No.61405217);the Zhejiang Provincial Natural Science Foundation,China(Grant No.LY20F050001);the Anhui Polytechnic University Research Startup Foundation,China(Grant No.2020YQQ042);the Pre-research Project of Natural Science Foundation of Anhui Polytechnic University,China(Grant No.Xjky2020021)。; The broadband absorption enhancement effect in ultrathin molybdenum disulfide(Mo S2)films is investigated.It is achieved by inserting the Mo S2 film between a dielectric film and a one-dimensional silver grating backe...; 关键词：two-dimensional(2D)materials transition-metal dichalcogenide PLASMONICS absorption enhancement

Characterization of swift heavy ion tracks in MoS2 by transmission electron microscopy: 《Chinese Physics B》2020年第10期401-405,共5页Li-Jun Xu Peng-Fei Zhai Sheng-Xia Zhang Jian Zeng Pei-Pei Hu Zong-Zhen Li Li Liu You-Mei Sun Jie Liu; Project supported by the National Natural Science Foundation of China (Grant Nos. 11675233,11690041,11405229,11705246,and 11505243);Chinese Academy of Sciences “Light of West China” Program;the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2020412)。; The various morphologies of tracks in MoS2 irradiated by swift heavy ions at normal and 30° incidence with 9.5–25.0 MeV/u 86Kr, 129Xe, 181Ta, and 209Bi ions were investigated by transmission electron microscopy. The...; 关键词：ion track MOS2 transmission electron microscopy(TEM) RECRYSTALLIZATION

First-principles study of magnetism of 3d transition metals and nitrogen co-doped monolayer MoS2: 《Chinese Physics B》2020年第9期450-457,共8页Long Lin Yi-Peng Guo Chao-Zheng He Hua-Long Tao Jing-Tao Huang Wei-Yang Yu Rui-Xin Chen Meng-Si Lou Long-Bin Yan; Project supported by the Key Project of the National Natural Science Foundation of China(Grant No.51702089);the National Natural Science Foundation of China(Grant Nos.21603109 and 11804081);the Henan Joint Fund of the National Natural Science Foundation of China(Grant No.U1404216);China Postdoctoral Science Foundation(Grant No.2019M652425);the One Thousand Talent Plan of Shaanxi Province,China,the Natural Science Foundation of Henan Province,China(Grant Nos.182102210305 and 19B430003);the Key Research Project for the Universities of Henan Province,China(Grant No.19A140009);the Doctoral Foundation of Henan Polytechnic University,China(Grant No.B2018-38);the Open Project of Key Laboratory of Radio Frequency and Micro-Nano;the Fund from the Electronics of Jiangsu Province,China(Grant No.LRME201601).; The electronic structures and magnetic properties of diverse transition metal (TM=Fe, Co, and Ni) and nitrogen (N) co-doped monolayer MoS2 are investigated by using density functional theory. The results show that the...; 关键词：MOS2 first principle calculations diluted magnetic semiconductors magnetic property

Temperature-switching logic in MoS2 single transistors: 《Chinese Physics B》2020年第9期464-469,共6页Xiaozhang Chen Lehua Gu Lan Liu Huawei Chen Jingyu Li Chunsen Liu Peng Zhou; Project supported by the National Natural Science Foundation of China(Grant Nos.61925402,61851402,and 61734003);Science and Technology Commission of Shanghai Municipality,China(Grant No.19JC1416600);National Key Research and Development Program of China(Grant No.2017YFB0405600);Shanghai Education Development Foundation and Shanghai Municipal Education Commission Shuguang Program,China(Grant No.18SG01).; Due to their unique characteristics,two-dimensional(2D)materials have drawn great attention as promising candidates for the next generation of integrated circuits,which generate a calculation unit with a new working m...; 关键词：molybdenum disulfide(MoS2) LOGIC temperature dependence MOBILITY

Modulation of carrier lifetime in MoS2 monolayer by uniaxial strain被引量：1: 《Chinese Physics B》2020年第7期182-187,共6页Hao Hong Yang Cheng Chunchun Wu Chen Huang Can Liu Wentao Yu Xu Zhou Chaojie Ma Jinhuan Wang Zhihong Zhang Yun Zhao Jie Xiong Kaihui Liu; Project supported by the Natural Science Foundation of Beijing,China(Grant No.JQ19004);the Excellent Talents Training Support Fund of Beijing,China(Grant No.2017000026833ZK11);the National Natural Science Foundation of China(Grant Nos.51991340 and 51991342);the National Key Research and Development Program of China(Grant Nos.2016YFA0300903 and 2016YFA0300804);the Key Research and Development Program of Guangdong Province,China(Grant Nos.2019B010931001,2020B010189001,2018B010109009,and 2018B030327001);the Science Fund from the Municipal Science&Technology Commission of Beijing,China(Grant No.Z191100007219005);the Graphene Innovation Program of Beijing,China(Grant No.Z181100004818003);the Fund from the Bureau of Industry and Information Technology of Shenzhen City,China(Graphene platform 201901161512);the Innovative and Entrepreneurial Research Team Program of Guangdong Province,China(Grant No.2016ZT06D348);the Fund from the Science,Technology,and Innovation Commission of Shenzhen Municipality,China(Grant No.KYTDPT20181011104202253).; Carrier lifetime is one of the most fundamental physical parameters that characterizes the average time of carrier recombination in any material.The control of carrier lifetime is the key to optimizing the device func...; 关键词：two-dimensional materials carrier dynamics STRAIN trap states

Effect of graphene grain boundaries on MoS2/graphene heterostructures: 《Chinese Physics B》2020年第6期44-48,共5页Yue Zhang Xiangzhe Zhang Chuyun Deng Qi Ge Junjie Huang Jie Lu Gaoxiang Lin Zekai Weng Xueao Zhang Weiwei Cai; National Natural Science Foundation of China(Grant No.11874423).; The grain boundaries of graphene are disordered topological defects,which would strongly affect the physical and chemical properties of graphene.In this paper,the spectral characteristics and photoresponse of MoS2/gra...; 关键词：PHOTORESPONSE HETEROSTRUCTURES GRAIN-BOUNDARY

Magnetic field enhanced single particle tunneling in MoS2-superconductor vertical Josephson junction: 《Chinese Physics B》2020年第5期22-25,共4页Wen-Zheng Xu Lai-Xiang Qin Xing-Guo Ye Fang Lin Da-Peng Yu Zhi-Min Liao; Project supported by the National Key Research and Development Program of China(Grant Nos.2018YFA0703703 and 2016YFA0300802);the National Natural Science Foundation of China(Grant Nos.91964201,61825401,and 11774004).; As a prototypical transition-metal dichalcogenide semiconductor, MoS2 possesses strong spin–orbit coupling, which provides an ideal platform for the realization of interesting physical phenomena. Here, we report the ...; 关键词：proximity effect transition metal dichalcogenides MAGNETOTRANSPORT

A simple tight-binding approach to topological superconductivity in monolayer MoS2: 《Chinese Physics B》2020年第2期425-431,共7页H Simchi; Monolayer molybdenum disulfide(MoS2)has a honeycomb crystal structure.Here,with considering the triangular sublattice of molybdenum atoms,a simple tight-binding Hamiltonian is introduced(derived)for studying the phase...; 关键词：MOS2 TOPOLOGICAL SUPERCONDUCTIVITY CHERN number band inversion

Improved performance of back-gate MoS2 transistors by NH3-plasma treating high-k gate dielectrics: 《Chinese Physics B》2019年第12期338-344,共7页Jian-Ying Chen Xin-Yuan Zhao Lu Liu Jing-Ping Xu; Project supported by the National Natural Science Foundation of China(Grant No.61774064); NH3-plasma treatment is used to improve the quality of the gate dielectric and interface. Al2O3 is adopted as a buffer layer between HfO2 and MoS2 to decrease the interface-state density. Four groups of MOS capacitors...; 关键词：MoS2 transistor high-k dielectric NH3-plasma treatment oxygen vacancy mobility

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