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Crystal and electronic structure of a quasi-two-dimensional semiconductor Mg_(3)Si_(2)Te_(6): 《Chinese Physics B》2023年第3期549-553,共5页黄潮欣程本源张云蔚姜隆李历斯霍梦五刘晖黄星梁飞翔陈岚孙华蕾王猛; the National Natural Science Foundation of China(Grant Nos.12174454,11904414,11904416,and 12104427);the Guangdong Basic and Applied Basic Research Foundation,China(Grant No.2021B1515120015);the Guangzhou Basic and Applied Basic Research Foundation(Grant No.202201011123);the National Key Research and Development Program of China(Grant No.2019YFA0705702).; We report the synthesis and characterization of a Si-based ternary semiconductor Mg_(3)Si_(2)Te_(6),which exhibits a quasitwo-dimensional structure,where the trigonal Mg_(3)Si_(2)Te_(6)layers are separated by Mg ions....; 关键词：SEMICONDUCTORS semiconductor compounds narrow-band systems methods of crystal growth

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