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Cleaning method of InSb [111] B of n-InSb [111] A/B for the growth of epitaxial layers by liquid phase epitaxy
《Journal of Semiconductors》2011年第5期146-148,共3页Gh.Sareminia F.Zahedi Sh.Eminov Ar.Karamian 
The crystal structure of InSb [111] A/B surfaces shows that this structure is polarized. This means that the surfaces of InSb [111] A and InSb [1^-1^- 1^-] B contain two different crystallized directions and they have...
关键词:cleaning lnSb LAPPING POLISHING InSb [1^-1^- 1^-] B 
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