集成电路用电子级多晶硅沉积工艺研究  

Study on the Deposition Technology of Electronic Polysilicon for IC

作　　者：吴锋 WU Feng(Jiangsu Xinhua Semiconductor Material Technology Co.,Ltd.,Xuzhou 221004,China)

机构地区：[1]江苏鑫华半导体材料科技有限公司,徐州221004

出　　处：《当代化工》2020年第12期2814-2817,共4页Contemporary Chemical Industry

基　　金：江苏省重点研发计划(产业前瞻与共性关键技术),大规模集成电路用硅料生产工艺研发(项目编号:BE2018060)

摘　　要：随着集成电路产业近年来的高速发展,对可用于12寸晶圆的高纯电子级多晶硅的需求不断提升,但是国内少数厂家仅能进入中低端市场,在高端领域始终被国外技术垄断。多晶硅主流的生产工艺是改良西门子法,其核心工序为化学气相沉积,配方、流场和温场分布、硅棒温度等因素对产品能物耗和质量影响。二氯二氢硅作为辅助原料,可提高沉积速率,降低生产能耗和物耗。通过对原料中二氯二氢硅进行独立控制,研究发现二氯二氢硅在气相沉积的不同时期,对于效率提升和产品纯度的增益比例有明显差异,在10%~13%的区间内会形成拐点,实验结果显示二氯二氢硅在前期和中前期应控制在10%,中后期降低至5%~7%,可获得较好的结果。With the rapid development of the integrated circuit industry in recent years,the demand for high-purity electronic polysilicon for 12 inch wafer is increasing,but a few domestic manufacturers can only enter the low-end market,and they are always in the situation of being monopolized by foreign technology in the high-end field.At present,the main production process of polysilicon is the improved Siemens method,and its core process is chemical vapor deposition process.The factors such as formula,flow field and temperature field distribution,and silicon rod temperature will have complex effect on the energy and material consumption and quality of products.As an auxiliary raw material,dichlordihydrosilicate can increase the deposition rate,reduce the raw material,increase the deposition rate,reduce the production energy consumption and material consumption.Through the independent control of dichlordihydrosilicate in the raw material,it was found that in different periods of vapor deposition,the gain ratio of efficiency improvement and product purity was significantly different,and the inflexion point was formed in the range of 10%~15%.The experimental results showed that the dichlordihydrosilicate should be controlled at 10%in the early and middle early stages,and reduced to 5%~7%in the middle and late stages to obtain better results.

关 键 词：电子级多晶硅 化学气相沉积 二氯二氢硅 

分 类 号：TQ127.2[化学工程—无机化工] TN43[电子电信—微电子学与固体电子学]