Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks  

作　　者：Hong YANG Luwei QI Yanbo ZHANG Bo TANG Qianqian LIU Hao XU Xueli MA Xiaolei WANG Yongliang LI Huaxiang YIN Junfeng LI Huilong ZHU Chao ZHAO Wenwu WANG Tianchun YE 

机构地区：[1]Key Laboratory of Microelectronics Devices&Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China [2]School of Microelectronics,University of Chinese Academy of Sciences,Beijing 100049,China [3]National Space Science Center,Chinese Academy of Sciences,Beijing 100190,China

出　　处：《Science China(Information Sciences)》2020年第2期248-250,共3页中国科学（信息科学）（英文版）

基　　金：financially supported by National Key Project of Science and Technology of China(Grant Nos.2017ZX02315001-002,2019ZX02303).

摘　　要：Dear editor,High k/metal gate(HKMG)stacks with fully gatelast processing have become the primary solution for sub-22-nm volume manufacturing with the development of complementary oxide semiconductor(CMOS)technology[1].In the HKMG stack,titanium nitride(TiN)is observed to play an important role as a work-function metal and an HK capping layer.

关 键 词：red Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks ALD FINFET 

分 类 号：TN386[电子电信—物理电子学]