沟道长度对国产28nm pMOSFET NBTI的影响研究  

Research on the Influence of Channel Length on Domestic 28 nm pMOSFET NBTI

作　　者：韦拢 韦覃如 赵鹏 李政槺 周镇峰 林晓玲[1,2] 章晓文 高汭[1,2] WEI Long;WEI Qinru;ZHAO Peng;LI Zhengkang;ZHOU Zhenfeng;LIN Xiaoling;ZHANG Xiaowen;GAO Rui(CEPREI,Guangzhou 511370,China;Science and Technology on Reliability Physics and Application of Electrical Component Laboratory,Guangzhou 511370,China;South China University of Technology,School of Electronic and Information Engineering,Guangzhou 510641,China)

机构地区：[1]工业和信息化部电子第五研究所,广东广州511370 [2]电子元器件可靠性物理及其应用技术重点实验室,广东广州511370 [3]华南理工大学电子与信息学院,广东广州510641

出　　处：《电子产品可靠性与环境试验》2022年第S02期40-42,共3页Electronic Product Reliability and Environmental Testing

基　　金：广州市科技计划项目(202002030299)资助

摘　　要：负偏置温度不稳定性(NBTI:Negative Bias Temperature Instability)是半导体先进工艺MOSFET器件最普遍、最严重的老化效应之一,严重地影响着集成电路的可靠性。研究了沟道长度对国产28 nm pMOSFET器件MBTI的影响,结果表明:针对单一沟道器件,沟道长度越短,NBTI效应越严重。但是,针对多个器件单元串联组成的长沟道器件,NBTI效应只与每个器件单元的沟道长度有关,与器件单元数量无关。NBTI is one of the most common and serious aging effects of semiconductor advanced process MOSFET devices,which seriously affects the reliability of integrated circuits.The effect of channel length on NBTI of domestic 28 nm p MOSFET devices is studied.The results show that for a single channel device,the shorter the channel length is,the more serious the NBTI effect will be;for long channel device which are constructed by connecting multiple device units in series,NBTI is only related to the channel length of each device unit,and has nothing to do with the number of device units.

关 键 词：负偏置温度不稳定性 沟道长度 金属-氧化物半导体场效应晶体管 

分 类 号：TN386[电子电信—物理电子学]