用于802.11a系统的5.8GHz 0.18μm CMOS全集成低噪声放大器设计  

5.8GHz All-on-Chip Low Noise Amplifier in 0.18μm CMOS for Application of 802.11a System

作　　者：蒋东铭[1] 黄风义[1] 陆静学[1] 赵亮[1] 

机构地区：[1]东南大学射频与光电集成电路研究所

出　　处：《电子器件》2007年第2期380-383,共4页Chinese Journal of Electron Devices

基　　金：江苏省自然科学基金资助(BK2004066)

摘　　要：通过对输入匹配、噪声和线性度的分析,给出了改进低噪声放大器综合性能的方法.利用软件对电路进行噪声优化,设计出了一个0.18μm CMOS工艺的5.8GHz全集成低噪声放大器.采用工艺厂家提供的电感测试数据进行参数提取,得到精准的电感模型并用于电路仿真.设计结果是整个电路功耗13mW,功率增益为14dBm,噪声系数为2.05dB,线性度指标IIP3为-1dBm.An analysis of input-matching and noise and linearity is presented,which follows up a method to upgrade the general performance of Low Noise Amplifier.Noise optimization is taken on by software and a 5.8 GHz all-on-chip Low Noise Amplifier in 0.18 μm CMOS technology is presented.With the measurement data of inductors applied by the Foundry,parameter extraction is carried on for these inductors.An accurate on-chip inductors model is realized for the circuit simulation.The result is that the total circuit's p...

关 键 词：低噪声放大器 CMOS工艺 噪声优化 电感模型 

分 类 号：TN722.3[电子电信—电路与系统]