Ka波段分布式MEMS移相器低驱动电平容性开关的机电设计  

Electromechanical Design of Low-Driven Voltage Capacitive Switches Based on Ka-Bank Distributed MEMS Phase Shifters

作　　者：贺训军[1] 吴群[1] 金博识[1] 宋明歆[2] 殷景华[2] 

机构地区：[1]哈尔滨工业大学电子与信息技术研究院,哈尔滨150001 [2]哈尔滨理工大学应用科学学院,哈尔滨150080

出　　处：《电子器件》2007年第5期1835-1838,共4页Chinese Journal of Electron Devices

基　　金：国家自然科学基金资助项目(60571026);哈尔滨工业大学跨学科交叉性研究基金资助(HITMD200307)

摘　　要：为降低Ka波段分布式MEMS移相器容性开关的驱动电压,提出不同形状新型低弹性系数铰链梁结构MEMS电容开关的机电设计概念.采用Intelli SuiteTM和ADS软件分析了三种梁结构MEMS电容开关的位移分布、驱动电压、机械振动模式和射频性能等参数,结果表明:所设计新型beam2结构MEMS电容开关具有优越的机电特性和射频特性,即开关的驱动电压为3V,机械振动模式固有频率都大于31kHz,在35GHz处插入损耗和回波损耗分别为0.082dB和18.6dB,而相移量可达到105.9o.The RF MEMS capacitive switches have demonstrated great potential in microwave phase shifters and millimeter-wave circuits and devices due to their very low loss,low power consumption,and low cost characteristics.To reduce the driven-voltage of switches based on Ka band distributed MEMS phase shifters,the mechanical designs of different low spring-constant hinge beam structure are presented.The displacement distribution,driven voltage,mechanical modes and RF performance of the switches using these beams are...

关 键 词：MEMS移相器 电容开关 低驱动电压 机电特性 射频特性 

分 类 号：TN623[电子电信—电路与系统]