7.5～9.5GHz AlGaN/GaN HEMT内匹配微波功率管  

7.5～9.5 GHz AlGaN/GaN HEMT Internal Matched Microwave Power Transistor

作　　者：王帅[1] 陈堂胜[2] 张斌[2] 李拂晓[2] 陈辰[2] 龚敏[1] 

机构地区：[1]四川大学物理科学与技术学院微电子学四川省重点实验室,成都610064 [2]单片集成电路及模块国家重点实验室南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2007年第2期159-162,206,共5页Research & Progress of SSE

摘　　要：报道了研制的1mm栅宽的AlGaN/GaN HEMT内匹配微波功率管,在32V漏偏压下在7.5～9.5GHz频率范围内输出功率大于5W,功率附加效率典型值为30%,功率增益大于6dB,带内增益平坦度为±0.4dB,带内最大输出功率为6W。An internal matched microwave power AlGaN/GaN HEMT with 1 mm gate width is reported in this paper.Under the drain bias voltage of 32 V the transistor delivers output power of more than 5 W with a power gain of more than 6 dB and the typical power-added efficiency of 30% in frequency from 7.5 to 9.5 GHz.The flatness of power gain across the band is within ±0.4 dB.The maximum output power of AlGaN/GaN HEMT reaches 6 W.

关 键 词：铝镓氮/氮化镓 高电子迁移率晶体管 内匹配 

分 类 号：TN12[电子电信—物理电子学]