一种高电源抑制比的CMOS带隙基准电压源  

CMOS bandgap reference voltage source with high PSRR

作　　者：张道礼[1] 梁延彬[1] 吴艳辉[2] 陈胜[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074 [2]弥亚微电子上海有限公司,上海201204

出　　处：《华中科技大学学报（自然科学版）》2007年第11期106-108,共3页Journal of Huazhong University of Science and Technology(Natural Science Edition)

摘　　要：基于CSMC 0.5μm CMOS工艺,采用CMOS技术,设计一种高性能的带隙基准电压源.带隙基准电压源输出电压经过电平转换电路,反馈回带隙基准电压源中的运算放大器,可以获得良好的电源特性和带负载能力.采用可修调电阻阵列,精确地控制温度系数.仿真结果表明:在5 V电源电压下,温度系数为8.28×10-6/℃,低频电源抑制比为83 dB.A high-powered bandgap reference voltage source was designed and discussed.The bandgap reference voltage source used the structure that the output voltage through voltage level shift circuit was fed back to provide the power for the bandgap reference voltage source′s operational amplifier to reach high power character and heavy load.The temperature coefficient could be controlled precisely by trimming resistors.The bandgap reference was designed in central semicondnctor manufacturing corporation(CSMC) 0.5 μ...

关 键 词：带隙基准 反馈 温度系数 电源抑制比 可修调电阻 

分 类 号：TN432[电子电信—微电子学与固体电子学]