AlN陶瓷活性法金属化  

Study of the Metallization of AlN by Active Brazing Filler Metals

作　　者：张小勇[1] 陆艳杰[1] 刘鑫[1] 方针正[1] 楚建新[1] 

机构地区：[1]北京有色金属研究总院,北京100088

出　　处：《真空电子技术》2007年第4期53-55,73,共4页Vacuum Electronics

摘　　要：对AlN陶瓷活性金属化Ag-Cu-Ti钎料配方及工艺进行了研究,发现该钎料浸润AlN陶瓷是活性组元Ti与AlN发生化学反应的结果.要获得良好的金属化质量,钎料中Ti含量应高于2.0%(质量比),金属化层与AlN反应界面厚度应控制在10～15 μm范围内.The composition of Ag-Cu-Ti active brazing alloy and the process of AlN metallization were studied.It was found that the wetting of Ag-Cu-Ti on AlN was the result of chemical reaction between active Ti in brazing alloy and AlN.To get robust bond between AlN matrix and metal layer of surface,the content of Ti in brazing alloy should be above 2.0%(wt) and the thickness of reaction layer should be controlled in the range of 10～15 μm.

关 键 词：ALN 活性金属化 AG-CU-TI钎料 

分 类 号：TB756[一般工业技术—真空技术]