三氧化钨纳米薄膜制备与气敏性能的研究  

Study on Fabrication of Nanocrystalline Tungsten Trioxide Thin Film and Gas Sensing-Characteristics

作　　者：尹英哲[1] 胡明[1] 冯有才[1] 陈鹏[1] 

机构地区：[1]天津大学电子信息工程学院

出　　处：《传感技术学报》2007年第11期2361-2363,共3页Chinese Journal of Sensors and Actuators

摘　　要：讨论一种对二氧化氮具有高灵敏性的WO3纳米薄膜的制备方法.当基片温度为室温,溅射混合气体(O2/Ar)的比例为1:1时,用直流反应磁控溅射法制备的薄膜,经过两步热处理(300℃/600℃),得到纳米结构WO3气敏元件.通过XRD、XPS和SEM对该薄膜的晶体结构和化学成分进行分析,用静态配气法测试NO2气敏特性.在Si3N4基片上制备的这种薄膜对空气中较低浓度的NO2(体积分数为0.1×10-5～3×10-5)具有优异的敏感特性和响应特性,最佳工作温度为150℃,在此温度下对其他一些气体(如CO,C2H5OH,NH3)的敏感性很差,显示出良好的选择性.The formation of nanocrystalline WO3 thin film with high sensitivity for NO2 gas was described.The films on Si3N4 substrate were deposited using dc reactive magnetron sputtering in 1:1 of sputtering gas ratio(Ar/O2) and prepared by two-step annealing(300℃ and 600℃).The film morphology,crystalline phase and chemical composition have been characterized through XRD,SEM,XPS analysis and NO2 gas sensing characteristics of this film were measured.The thin-film gas sensor fabricated exhibited excellent sensitivity and response characteristics in the presence of low concentration of 1×10-5~3×10-5NO2 gas in air.The operating temperature is 150℃.The sensitivities of other gases (CO,C2H5OH,NH3) were small,it is shown that the selectivity is good.

关 键 词：WO3纳米薄膜 灵敏度 直流反应磁控溅射 两步热处理 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]