SiH_2CL_2-NH_3-N_2体系LPCVD Si_3N_4薄膜因素分析  

Analysis on Si_3N_4 thin film based on the SiH_2CL_2-NH_3-N_2 system by LPCVD

作　　者：谭刚[1] 吴嘉丽[1] 

机构地区：[1]中国工程物理研究院电子工程研究所,四川绵阳621900

出　　处：《光学精密工程》2005年第z1期34-37,共4页Optics and Precision Engineering

摘　　要：以二氯甲硅烷和氨气分别作为低压化学气相淀积(LPCVD)氮化硅(Si3N4)薄膜的硅源和氨源,以高纯氮气为载气,在热壁型管式反应炉中反应生成Si3N4薄膜。考察了工作压力、反应温度、气体原料组成等因素对Si3N4薄膜淀积速率的影响。结果表明:Si3N4薄膜的生长速率随着工作压力的增大单调增大,随着原料气中氨气和二氯甲硅烷的流量之比的增大单调减小。随着反应温度的升高,淀积速率逐渐增加,在840℃附近达到最大,随后迅速降低。在适当的工艺条件下,制备的Si3N4薄膜均匀、平整。较低的薄膜淀积速率有助于提高薄膜的均匀性,降低薄膜的表面粗糙度。Si_3N_4 film is grown on silicon wafer from SiH_2Cl_2-NH_3-N_2 system via low pressure chemical vapor deposition(LPCVD) in hot-wall horizontal tubular reactor reactivity silicon nitride films.The growth rate of the film is investigated with the variation of deposition parameters,including total pressure,substrate temperature and source gas ratio by spectroscopic ellipsometer.The growth rate of the films increases with the increase of total pressure and decrease of NH_3 to SiH_2Cl_2 ratio.As substrate temperature increases,growth rate linearly increases at lower temperature and then promptly decreases at higher temperature.

关 键 词：SiH2CL2-NH3-N2体系 LPCVD 氮化硅薄膜 淀积速率 

分 类 号：O484.1[理学—固体物理]