p-InGaN与Ni/Au的欧姆接触特性研究  

Research of the Ohmic Contact between p-InGaN and Ni/Au

作　　者：林巧明[1] 郭霞[1] 梁庭[1] 顾晓玲[1] 郭晶[1] 沈光地[1] 

机构地区：[1]北京工业大学光电子技术实验室,北京100022

出　　处：《固体电子学研究与进展》2008年第1期87-90,共4页Research & Progress of SSE

基　　金：国家973计划(2006CB604902);北京市人才强教计划项目(05002015200504);北京市教委项目(kz200510005003);北京市科委重点项目(D0404003040221);国家自然科学基金(60506012);十五国家科技攻关项目(2003BA316A01-01-08)

摘　　要：通过对不同厚度的p-InGaN样品进行环形传输线欧姆接触实验,发现p-InGaN与Ni/Au的比接触电阻随InGaN层厚度的增大而增大,且当InGaN层的厚度小于某一特定值时,其比接触电阻低于p-GaN与Ni/Au的欧姆比接触电阻,通过分析认为这是由InGaN层的极化效应导致接触势垒降低和载流子隧穿几率增大造成的,但同时受样品表面形貌和InN本身固有的积累电子层的特性影响,当InGaN层的厚度超过这一特定值后其接触特性反而比p-GaN差。By conducting the experiments of circular transmission line method(CTLM)on samples with different thicknesses of p-InGaN,we find that the specific contact resistance between p-InGaN and Ni/Au increases as the thickness of InGaN increases.When the thickness of InGaN is less than a certain value,the specific contact resistance between p-InGaN and Ni/Au is lower than that of p-GaN s.It is attributed to the situation that the tunneling barrier width is drastically reduced by polarization-induced electric fields...

关 键 词：铟镓氮 欧姆接触 环形传输线 极化 

分 类 号：TN304[电子电信—物理电子学]