InAlAs/InGaAs/InP HEMT欧姆接触研究  

Design and Fabrication of Ohmic Contact to InAlAs/InGaAs/InP HEMT

作　　者：康耀辉[1] 林罡[1] 李拂晓[1] 

机构地区：[1]南京电子器件研究所单片集成电路与模块国家级重点实验室,南京210016

出　　处：《固体电子学研究与进展》2008年第1期145-148,共4页Research & Progress of SSE

摘　　要：应用Au/Ge/Ni系金属在InAlAs/InGaAs/InP HEMT上成功制作了良好的合金欧姆接触。采用WN和Ti双扩散阻挡层工艺优化欧姆接触,在样品上获得了最低9.01×10-8Ω.cm2的比接触电阻,对应的欧姆接触电阻为0.029Ω.mm。同时,在模拟后续工艺环境的20min250°C热处理后,器件的欧姆接触性能无显著变化,表明其具有一定的温度稳定性。This paper reports the fabrication technique of ohmic contact to InAlAs/InGaAs/InP HEMT.By using the developed rapid thermal annealing(RTA)process with WN and Ti double blocking layers,a minimum contact resistance of 0.029 Ω·mm and a specific contact resistance of 9.01×10-8 Ω·cm2 have been achieved for InP HEMT.At the same time,the sample s ohmic contact resistance hasn t prominent change after heat treatment.The experimental result indicates that ohmic contact has the better thermal stability.

关 键 词：磷化铟 欧姆接触 温度稳定性 

分 类 号：TN305[电子电信—物理电子学]