p型重掺杂应变Si_(1-x)Ge_x层中少子常温和低温行为  

The Minority Carrier Concentration of Strained Si_(1-x)Ge_x Layers As Function of Ge Fraction and Temperature

作　　者：赵传阵[1] 唐吉玉[1] 肖海霞[2] 文于华[1] 吴靓臻[1] 孔蕴婷[1] 

机构地区：[1]华南师范大学物理与电信工程学院,广州510006 [2]肇庆学院物理系,广东肇庆526061

出　　处：《固体电子学研究与进展》2008年第1期8-11,共4页Research & Progress of SSE

摘　　要：采用解析的方法计算了少数载流子浓度与Ge组分x、温度T以及掺杂浓度N的关系。发现常温时,在同一掺杂浓度下,少子浓度随Ge组分的增加而增大,其增加的速度越来越快;在同一Ge组分下,少子浓度随掺杂浓度的增加而减少,其减少的速度越来越慢。低温下,在考虑杂质不完全电离的同时,对由非简并情形向简并情形过渡的杂质电离出来的空穴浓度进行了修正,发现在同一Ge组分下,少子浓度随掺杂浓度的增加而增大,其增加的速度变得越来越快。同一掺杂浓度下,少子浓度随Ge组分的增加而增大,其增加的速度,轻掺杂时增加的较慢,重掺杂时增加得越来越快。In this paper the minority carrier concentration is calculated analytically with the varying of the temperature T,Ge fraction x and doping concentration.It is found that for the given doping concentration,the minority carrier concentration increases more and more quickly with the increasing of Ge fraction x.For the given Ge fraction x,the minority carrier concentration increases more and more slowly with the increasing of doping concentration at 300 K.At low temperature,the hole concentration induced by ion...

关 键 词：硅锗合金 少数载流子浓度 低温特性 掺杂浓度 

分 类 号：TN304[电子电信—物理电子学]