4H-SiC MESFET的新型经验电容模型  

A Novel Empirical Large Signal Capacitance Model for 4H-SiC MESFET

作　　者：曹全君[1] 张义门[1] 张玉明[1] 汤晓燕[1] 吕红亮[1] 王悦湖[1] 

机构地区：[1]西安电子科技大学微电子研究所宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《固体电子学研究与进展》2008年第1期33-37,共5页Research & Progress of SSE

基　　金：国家973项目的资助(编号为No.51327010101)

摘　　要：基于器件工作机理,提出了一种新型的4H-SiC MESFET经验大信号电容模型。模型参数提取采用Lev-enberg-Marquardt优化算法,提取的模型主要参数具有一定物理意义。C-V特性的模型模拟结果与实验数据的比较表明两者符合良好。该模型还与CAD工具的通用电容模型进行了比较,结果表明新模型具有更高的精度。A new empirical large signal capacitance model for 4H-SiC MESFETs is presented based on the operational principle of devices.The Levenberg-Marquardt method is used to optimize the parameter extraction.And the main extracted parameters are physical proposed.The comparison of simulation results with experiment data of C-V characteristics shows that they are in good agreement.A comparison of the present model with general capacitance models used in CAD tools is also made,which shows the present model has bette...

关 键 词：4H-碳化硅 金属半导体场效应晶体管 大信号电容 经验模型 Levenberg-Marquardt方法 

分 类 号：TN386[电子电信—物理电子学]