Ni/4H-SiC肖特基势垒二极管研制  

Development of Ni Schottky Barrier Diode on 4 H-SiC

作　　者：张发生[1] 李欣然[1] 

机构地区：[1]湖南大学电气与信息工程学院

出　　处：《固体电子学研究与进展》2008年第1期29-32,共4页Research & Progress of SSE

基　　金：高校青年教师科研基金资助项目

摘　　要：采用微电子平面工艺,高真空电子束热蒸发金属Ni分别作肖特基接触和欧姆接触,二级场限环终端表面保护,研制出Ni/4H-SiC肖特基势垒二极管(SBD)。I-V特性测量说明,Ni/4H-SiCSBD有较好的整流特性,热电子发射是其主要的运输机理。反向击穿电压达1500V,理想因子为1.2,肖特基势垒高度为0.92eV。With microelectronics plane technology and the electron beam evaporation used to deposit metal Ni to form the Schottky contact and ohmic contact respectively in high vacuum ambient,Ni/4H-SiC Schottky barrier diodes with the in structures containing two-FLR were made.Measurents of the I-V characteristics of these diodes show that the devices have good rectifying property and thermionic emission current is the dominant conduction mechanism for these Schottky contacts.The experimentally obtained values of brea...

关 键 词：碳化硅 肖特基势垒二极管 电特性 

分 类 号：TN31[电子电信—物理电子学]